Electronic structure of YFe 2 Ge 2 studied by angle-resolved photoemission spectroscopy
D. F. Xu,D. W. Shen,D. Zhu,J. Jiang,B. P. Xie,Q. S. Wang,B. Y. Pan,P. Dudin,T. K. Kim,M. Hoesch,J. Zhao,X. G. Wan,D. L. Feng
2016-01-01
Abstract:D. F. Xu,1,2,3 D. W. Shen,4,5,* D. Zhu,6 J. Jiang,1,2,3 B. P. Xie,1,2,3 Q. S. Wang,1 B. Y. Pan,1 P. Dudin,7 T. K. Kim,7 M. Hoesch,7 J. Zhao,1,3 X. G. Wan,6 and D. L. Feng1,2,3,† 1State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China 2Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China 3Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China 4State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China 5CAS-Shanghai Science Research Center, Shanghai 201203, China 6National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and College of Physics, Nanjing University, Nanjing 210093, China 7Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom (Received 29 August 2015; revised manuscript received 17 December 2015; published 11 January 2016)