Ultra-high Responsivity Photodetector on the Silicon-Graphene Platform

Yanlong Yin,Longhai Yu,Daoxin Dai

DOI: https://doi.org/10.1109/group4.2016.7739117

2016-01-01

Abstract:A graphene-silicon conductive photodetector is designed and demonstrated with ultra-high responsivity (~10 7 A/W) by introducing a graphene-sheet with a geometrical size designed optimally.

What problem does this paper attempt to address?

Silicon-graphene conductive photodetector with ultra-high responsivity

Jingjing Liu,Yanlong Yin,Longhai Yu,Yaocheng Shi,Di Liang,Daoxin Dai

DOI: https://doi.org/10.1038/srep40904

2017-01-20

Abstract:Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at -25 °C in our experiment.
High Responsivity, Broadband, and Fast Graphene/Silicon Photodetector in Photoconductor Mode

Zefeng Chen,Zhenzhou Cheng,Jiaqi Wang,Xi Wan,Chester Shu,Hon Ki Tsang,Ho Pui Ho,Jian-Bin Xu

DOI: https://doi.org/10.1002/adom.201500127

IF: 9

2015-05-12

Advanced Optical Materials

Abstract:A fast‐response photodetector is developed, which is highly photoresponsive and works over a broadband. It is fabricated using a combination of chemical vapor deposition graphene and silicon, together with the utilization of a lateral photoconductor operating mode. The photodetector exhibits high responsivities of ≈1.0 × 104 and ≈0.23 A W−1 in the visible (632 nm) and infrared regions (1550 nm), respectively. The response time is both below 3 μs in both spectral regions.

materials science, multidisciplinary,optics
Self-Driven Ultrafast Response Photodetector Based on Graphene/Water/Silicon Structure

Yanfei Yan,Yanghua Lu,Chang Liu,Xutao Yu,Can Wang,Renyu Yang,Shisheng Lin

DOI: https://doi.org/10.1002/solr.202200782

IF: 9.1726

2022-01-01

Solar RRL

Abstract:The graphene/water/semiconductor structure can convert kinetic energy into direct current output using the polarization principle, showing its unique physical characteristics and superior performance in the power generation direction. Herein, a photodetector application is developed based on the structure and reveals the physical mechanism of the displacement current caused by the polarization of more water molecules induced by silicon upon excitation under illumination. Furthermore, the research uses a graphene/water/silicon heterojunction as a self-driven photodetector with a wide response band contains from ultraviolet to visible light, the photodetector has a high sensitivity to the incident light of 635 nm with a responsivity of 433.46 mA W-1 and detectivity as 1.57 x 10(12) Jones. Moreover, the photodetector based on graphene-water-Si has an ultrafast response speed, with a typical rise/fall time of 564/766 ns. The photodetector remains substantial stable while sealed with polymethyl methacrylate after storage in air for 1 month. These results imply that graphene/water/ silicon heterojunctions may have great potential for practical applications as high-performance self-driven photodetectors.
ZnO Quantum Dot-Doped Graphene/h-Bn/gan-heterostructure Ultraviolet Photodetector with Extremely High Responsivity.

Yanghua Lu,Zhiqian Wu,Wenli Xu,Shisheng Lin

DOI: https://doi.org/10.1088/0957-4484/27/48/48lt03

IF: 3.5

2016-01-01

Nanotechnology

Abstract:A ZnO quantum dot. photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 AW(-1) and detectivity of more than 1.02 x 10(13) Jones (Jones = cm Hz(1/2) W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 AW(-1) to 1915 AW(-1) and the detectivity is improved from 5.8 x 10(12) to 1.0 x 10(13) Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.
Highly Sensitive, Fast Graphene Photodetector with Responsivity $>10^6$ A/W Using Floating Quantum Well Gate

Krishna Murali,Nithin Abraham,Sarthak Das,Sangeeth Kallatt,Kausik Majumdar

DOI: https://doi.org/10.48550/arXiv.1908.06924

2019-08-19

Applied Physics

Abstract:Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to weak absorption and fast photocarrier recombination, limiting their viability for low intensity light detection. Here we use a graphene/WS$_2$/MoS$_2$ vertical heterojunction to demonstrate a highly sensitive photodetector, where the graphene layer serves dual purpose, namely as the light absorption layer, and also as the carrier conduction channel, thus maintaining the broadband nature of the photodetector. A fraction of the photoelectrons in graphene encounter ultra-fast inter-layer transfer to a floating monolayer MoS$_2$ quantum well providing strong quantum confined photogating effect. The photodetector shows a responsivity of $4.4\times 10^6$ A/W at 30 fW incident power, outperforming photodetectors reported till date where graphene is used as light absorption material by several orders. In addition, the proposed photodetector exhibits an extremely low noise equivalent power ($N\!E\!P$) of $<4$ fW/$\sqrt{Hz}$ and a fast response ($\sim$ milliseconds) with zero reminiscent photocurrent. The findings are attractive towards the demonstration of graphene-based highly sensitive, fast, broadband photodetection technology.
Integrated high responsivity photodetectors based on graphene/glass hybrid waveguide.

Gencheng Wang,Tingge Dai,Zhetao Lvy,Yinlei Hao,Hui Yu,Yuehai Wang,Yubo Li,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1364/OL.41.004214

IF: 3.6

2016-01-01

Optics Letters

Abstract:We propose and fabricate an integrated graphene/glass hybrid photodetector (PD) with high responsivity and broad spectral bandwidth. The glass straight waveguide enables high absorption of the evanescent light of transverse magnetic (TM) mode propagating parallel to the single layer of graphene. It is based on the mechanism of light-induced change in conductance. As a result, a responsivity as high as 0.72 A/W at a low bias voltage of -0.1 V for a wide wavelength range from 1510 to 1630 nm is experimentally obtained. The proposed graphene/glass hybrid PD could find important applications in graphene-based photonic integrated circuits. (C) 2016 Optical Society of America
A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Jianghong Wu,Caiyu Qiu,Sirui Feng,Tianyi Yao,Yanfei Yan,Shisheng Lin

DOI: https://doi.org/10.1088/1361-6528/ab5a08

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Photodetectors based on graphene/GaAs heterostructure were fabricated and demonstrated for application in self-powered photodetection. Then, Si quantum dots (QDs) were spin-coated onto the surface of the devices to enhance the built-in field by photo-induced doping, because of the tunable Fermi level (E-F) of graphene and shallow junction of the heterojunction. Additionally, Au nanoparticles working as a light trapping structure were used to the enhance quantum efficiency of the Si QDs and the optical absorption of the heterojunction, benefitting from localized surface plasmon resonance. Therefore, a large-area photodetector under self-powered conditions achieved a high performance i.e. responsivity (1.81 x 10(5) V W-1), detectivity (2.0 x 10(12) Jones), fast response speed (<0.04 ms), and on-off ratio (6 x 10(3)). The high voltage responsivity opens a promising pathway to ultra-weak light detection, and facilities the development of novel sensors.
Graphene photodetectors with ultra-broadband and high responsivity at room temperature

Chang-Hua Liu,You-Chia Chang,Theodore B Norris,Zhaohui Zhong

DOI: https://doi.org/10.1038/nnano.2014.31

Abstract:The ability to detect light over a broad spectral range is central to several technological applications in imaging, sensing, spectroscopy and communication. Graphene is a promising candidate material for ultra-broadband photodetectors, as its absorption spectrum covers the entire ultraviolet to far-infrared range. However, the responsivity of graphene-based photodetectors has so far been limited to tens of mA W(-1) (refs 5-10) due to the small optical absorption of a monolayer of carbon atoms. Integration of colloidal quantum dots in the light absorption layer can improve the responsivity of graphene photodetectors to ∼ 1 × 10(7) A W(-1) (ref. 11), but the spectral range of photodetection is reduced because light absorption occurs in the quantum dots. Here, we report an ultra-broadband photodetector design based on a graphene double-layer heterostructure. The detector is a phototransistor consisting of a pair of stacked graphene monolayers (top layer, gate; bottom layer, channel) separated by a thin tunnel barrier. Under optical illumination, photoexcited hot carriers generated in the top layer tunnel into the bottom layer, leading to a charge build-up on the gate and a strong photogating effect on the channel conductance. The devices demonstrated room-temperature photodetection from the visible to the mid-infrared range, with mid-infrared responsivity higher than 1 A W(-1), as required by most applications. These results address key challenges for broadband infrared detectors, and are promising for the development of graphene-based hot-carrier optoelectronic applications.
High-responsivity graphene/silicon-heterostructure waveguide photodetectors

Xiaomu Wang,Zhenzhou Cheng,Ke Xu,Hon Ki Tsang,Jian-Bin Xu

DOI: https://doi.org/10.1038/nphoton.2013.241

IF: 35

2013-09-15

Nature Photonics

Abstract:Graphene-based photonic devices, such as ultrafast photodetectors, optical modulators and tunable surface plasmon polariton devices, have experienced rapid development in recent years1,2,3,4,5,6 because they benefit greatly from graphene's strong field-controlled optical response7,8. Here, we demonstrate a graphene/silicon-heterostructure photodiode formed by integrating graphene onto a silicon optical waveguide on a silicon-on-insulator (SOI) with a near to mid-infrared operational range. The waveguide enables absorption of evanescent light that propagates parallel to the graphene sheet, which results in a responsivity as high as 0.13 A W−1 at a 1.5 V bias for 2.75 µm light at room temperature. A photocurrent dependence on bias polarity was observed and attributed to two distinct mechanisms for optical absorption, that is, direct and indirect transitions in graphene at 1.55 µm and 2.75 µm, respectively. Our result demonstrates the use of in-plane absorption in a graphene-monolayer structure and the feasibility of exploiting indirect transitions in graphene/silicon-heterostructure waveguides for mid-infrared detection.

optics,physics, applied
Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Hao Jiang,Changbin Nie,Jintao Fu,Linlong Tang,Jun Shen,Feiying Sun,Jiuxun Sun,Meng zhu,Shuanglong Feng,Yang Liu,Haofei Shi,Xingzhan Wei

DOI: https://doi.org/10.1515/nanoph-2020-0261

IF: 7.5

2020-06-29

Nanophotonics

Abstract:Abstract The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 10 7 A/W and a fast response time of 90 μs were obtained. The specific detectivity D * was measured to be 1.46 ⨯ 10 13 Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

Yimeng Li,Peng Chen,Xiufang Chen,Ru Xu,Menghan Liu,Jing Zhou,Cheng Ge,Haocheng Peng,Xiaokang Mao,Jianbo Feng,Xiaobo Hu,Yan Peng,Xiangang Xu,Zili Xie,Xiangqian Xiu,Dunjun Chen,Bin Liu,Ping Han,Yi Shi,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1002/adom.202000559

IF: 9

2020-07-06

Advanced Optical Materials

Abstract:Ultraviolet (UV) photodetectors have been fabricated on a graphene/4H‐SiC wafer. In this device, the electrical doping in the graphene layer, under the gate, is realized by changing the gate voltage while the optical doping in the graphene layer outside the gate region is realized through the photogenerated carrier injection from SiC, by laser excitation at 325 nm. This kind of dual modulation of optical and electric fields ultimately results in the formation of a planar n–p–n or n–n–n junction in the graphene layer. The photoresponse results demonstrate that the planar n–p–n junction is formed at the negative gate voltage, and facilitates negative photoconductivity. The n–n–n junction is formed at the positive gate voltage and facilitates normal photoconductivity. The maximum responsivity, which is attributable to the high photoconductive gain in the planar n–n–n junction, is 254.1A W−1, at drain‐source voltage of −3 V and gate‐source voltage of 3 V. Based on these results, the estimated lifetime of the electrons in the graphene channel extends greatly to more than four orders of magnitude longer than that in the isolated graphene. The above results prove that this graphene/4H‐SiC combined structure possesses great potential in practical UV‐detection applications.

materials science, multidisciplinary,optics
High sensitivity, ultra-broadband SWNT-graphene hybrid photodetector

F. Wang,Y. D. Liu,X. M. Wang,Y. Li,X. Z. Wang,X. R. Wang,Y. B. Xu,Y. Shi,R. Zhang

DOI: https://doi.org/10.1109/CLEOPR.2015.7376062

2015-01-01

Abstract:A photodetector based on SWNT-graphene hybrid films and facile fabrication steps is demonstrated, which exhibits a remarkably high photoresponsivity of ∼ 100 A/W, across visible (400 nm) to the telecommunication wavelengths (1550 nm).
Hybrid ultrathin-silicon/graphene waveguide photodetector with a loop mirror reflector

Jiang Li,Yanlong Yin,Jingshu Guo,Chaoyue Liu,Daoxin Dai

DOI: https://doi.org/10.1364/OE.386103

IF: 3.8

2020-01-01

Optics Express

Abstract:Graphene has emerged as a promising solution for on-chip ultrafast photodetection for its advantages of easy integration, high mobility, adjustable chemical potential, and wide operation wavelength range. In order to realize high-performance photodetectors, it is very important to achieve efficient light absorption in the active region. In this work, a compact and high-speed hybrid silicon/graphene photodetector is proposed and demonstrated by utilizing an ultra-thin silicon photonic waveguide integrated with a loop mirror. With this design, the graphene absorption rate for the fundamental mode of TE polarization is improved by similar to 5 times compared to that in the conventional hybrid silicon/graphene waveguide with h(co)=220 nm. One can achieve 80% light absorption ratio within the active-region length of only 20 mu rn for the present silicon/graphene waveguide photodetector at 1550 nm. For the fabricated device, the responsivity is about 25 mA/W under 0.3V bias voltage and the 3-dB bandwidth is about 17 GHz. It is expected to achieve very high bandwidth by introducing high-quality Al2O3 insulator layers and reducing the graphene channel length in the future. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Ren-Jye Shiue,Yuanda Gao,Yifei Wang,Cheng Peng,Alexander D. Robertson,Dmitri K. Efetov,Solomon Assefa,Frank H. L. Koppens,James Hone,Dirk Englund

DOI: https://doi.org/10.1021/acs.nanolett.5b02368

2015-07-07

Abstract:Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

Optics,Materials Science
High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared

Xinyu Liu,Hao Ning,Jianhang Lv,Lixiang Liu,Li Peng,Feng Tian,Srikrishna Chanakya Bodepudi,Xiaochen Wang,Xiaoxue Cao,Yunfan Dong,Wenzhang Fang,Shaoxiong Wu,Huan Hu,Bin Yu,Yang Xu

DOI: https://doi.org/10.1063/5.0132028

IF: 4

2023-02-15

Applied Physics Letters

Abstract:Applied Physics Letters, Volume 122, Issue 7, February 2023. Metal–semiconductor–metal (MSM) structures have been widely used and extensively investigated for ultraviolet (UV) detection. However, traditional MSM structures suffer from large dark currents, narrow detection bands, and low collection efficiency. Optimizing these properties for broadband detection in MSM structures is essential for improving the performance and functionality in broader optoelectronics applications. We report a high-performance broadband graphene/thin silicon/graphene photodetector by realizing a synergistic combination of graphene and silicon absorption bandwidths from the x-ray to near-infrared regions. The sensitivity of the proposed photodetector in this spectral range is greatly enhanced. A high responsivity of 0.56 A/W, a high detectivity of 2.72 × 1011 Jones, and a fast response time of 7.2 ns are achieved. Moreover, the real-time array imaging at broadband regions presented in this study can benefit from the independent pixel structures similar to the complementary-metal-oxide-semiconductor (CMOS) architecture. This approach constitutes a reliable route toward a high-performance photodetector with prominent broad-spectrum response, high responsivity, and low noise. These results will motivate strategies to achieve high-performance, broadband image sensors, compatible for on-chip CMOS circuit technology that advances the development of next-generation graphene/silicon image sensors.

physics, applied
High-Responsivity Photodetector Based on a Suspended Monolayer Graphene/RbAg4I5 Composite Nanostructure

Qianqian Hu,Pengfei Wang,Jun Yin,Yu Liu,Bocheng Lv,Jia-Lin Zhu,Zhanmin Dong,Wei Zhang,Wanyun Ma,Jialin Sun

DOI: https://doi.org/10.1021/acsami.0c17751

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:Graphene has excellent electrical, optical, thermal, and mechanical properties that make it an ideal optoelectronic material. However, it still has some problems, such as a very low light absorption rate, which means it cannot meet the application requirements of high-performance optoelectronic devices. Here, we produce a high-responsivity photodetector based on a monolayer graphene/RbAg4I5 composite nanostructure. With the aid of poly(methyl methacrylate), we suspend the monolayer graphene on a hollow carving groove with a width of 100 μm. A RbAg4I5 film evaporated on the back of the graphene causes the composite nanostructure to generate a large photocurrent under periodic illumination. Experimental results show that the dissociation and recombination of ion-electron bound states (IEBSs) are responsible for the excellent photoresponse. The device has very high (>1 A W-1) responsivity in wide-band illumination wavelength from 375 nm to 808 nm, especially at 375 nm, where it shows a responsivity of up to ∼5000 A W-1. We designed the dimensions of the carving groove to allow the light spot to cover the entire groove, and we cut the graphene sheet to match the length of the carving groove. With the structural optimizations, the energy of light can be used more efficiently to dissociate the IEBSs, which greatly improves the photoresponse of optoelectronic devices based on the proposed monolayer graphene/RbAg4I5 composite nanostructure.
On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain

Ilya Goykhman,Ugo Sassi,Boris Desiatov,Noa Mazurski,Silvia Milana,Domenico de Fazio,Anna Eiden,Jacob Khurgin,Joseph Shappir,Uriel Levy,Andrea C. Ferrari

DOI: https://doi.org/10.1021/acs.nanolett.5b05216

2015-12-27

Abstract:We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves the way to graphene integrated silicon photonics.

Mesoscale and Nanoscale Physics
High-performance Graphene/si Hybrid Photodetector with a PMMA Coating Layer

Zhaowei Zhu,Zixi Wang,Chuantong Cheng,Decai Li,Hongda Chen

DOI: https://doi.org/10.1016/j.matlet.2021.129393

IF: 3

2021-01-01

Materials Letters

Abstract:Photodetectors with ultrahigh responsivity are meaningful for weak optical signal detection in the fields of biomedicine science and environmental monitoring. Graphene/Si hybrid photodetectors with ultrahigh photoresponsivity have already been reported. However, with all atoms exposed to the environment, graphene-based devices often show low stability. Here, the PMMA layer assisting the graphene transfer process has been retained on the surface of graphene during the fabrication process of the graphene/Si hybrid photodetector, and a high stability graphene photodetector with ultrahigh responsivity (>10(6) A W-1 for white LED illumination) has been successfully demonstrated. The fabricated graphene/Si hybrid photodetectors may have the potential to be utilized in functional near-infrared spectroscopy systems or underwater wireless optical communication systems for weak optical signal detection. (C) 2021 Published by Elsevier B.V.
Near Infrared Absorption Enhancement of Graphene for High-responsivity Photodetection

Xiyuan Cao,Yijin Zhang,Yi Jin,Aimin Wu

DOI: https://doi.org/10.1109/group4.2019.8925555

2019-01-01

Abstract:Near-infrared strong light harvesting of graphene is obtained based on multipole resonance interference of silicon nanodisks. The ultrathin design allows the active area with effective generation of photo carriers, paving a new way for small footprint high-speed and high-responsivity photon detection.
Compact Graphene Plasmonic Slot Photodetector on Silicon-on-insulator with High Responsivity

Zhizhen Ma,Kazuya Kikunage,Hao Wang,Shuai Sun,Rubab Amin,Mohammad Tahersima,Rishi Maiti,Mario Miscuglio,Hamed Dalir,Volker J. Sorger

DOI: https://doi.org/10.48550/arXiv.1812.00894

2018-11-15

Abstract:Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components usually results in a weak light-graphene interaction leading to large device lengths limiting electro-optic performance. In contrast, here we demonstrate a plasmonic slot graphene photodetector on silicon-on-insulator platform with high-responsivity given the 5 um-short device length. We observe that the maximum photocurrent, and hence the highest responsivity, scales inversely with the slot gap width. Using a dual-lithography step, we realize 15 nm narrow slots that show a 15-times higher responsivity per unit device-length compared to photonic graphene photodetectors. Furthermore, we reveal that the back-gated electrostatics is overshadowed by channel-doping contributions induced by the contacts of this ultra-short channel graphene photodetector. This leads to quasi charge neutrality, which explains both the previously-unseen offset between the maximum photovoltaic-based photocurrent relative to graphenes Dirac point and the observed non-ambipolar transport. Such micrometer compact and absorption-efficient photodetectors allow for short-carrier pathways in next-generation photonic components, while being an ideal testbed to study short-channel carrier physics in graphene optoelectronics.

Applied Physics,Optics

Ultra-high Responsivity Photodetector on the Silicon-Graphene Platform

Silicon-graphene conductive photodetector with ultra-high responsivity

High Responsivity, Broadband, and Fast Graphene/Silicon Photodetector in Photoconductor Mode

Self-Driven Ultrafast Response Photodetector Based on Graphene/Water/Silicon Structure

ZnO Quantum Dot-Doped Graphene/h-Bn/gan-heterostructure Ultraviolet Photodetector with Extremely High Responsivity.

Highly Sensitive, Fast Graphene Photodetector with Responsivity $>10^6$ A/W Using Floating Quantum Well Gate

Integrated high responsivity photodetectors based on graphene/glass hybrid waveguide.

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Graphene photodetectors with ultra-broadband and high responsivity at room temperature

High-responsivity graphene/silicon-heterostructure waveguide photodetectors

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

High sensitivity, ultra-broadband SWNT-graphene hybrid photodetector

Hybrid ultrathin-silicon/graphene waveguide photodetector with a loop mirror reflector

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared

High-Responsivity Photodetector Based on a Suspended Monolayer Graphene/RbAg4I5 Composite Nanostructure

On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain

High-performance Graphene/si Hybrid Photodetector with a PMMA Coating Layer

Near Infrared Absorption Enhancement of Graphene for High-responsivity Photodetection

Compact Graphene Plasmonic Slot Photodetector on Silicon-on-insulator with High Responsivity