Abstract:Energy band diagrams are widely utilized to explain the switching mechanism of resistance random access memory (RRAM). However, a precise and quantitative band theory is still lacking in this field. Although HfS2 has good applications in many fields because of its good electrical and optical properties, its applications in RRAM have seldom been reported. In this work, the exfoliated nanosheets of HfS2 were utilized to fabricate memory devices with a structure of Pt/Al/HfS2/p(+)-Si, which show typical bipolar resistive switching behavior with high switching voltage and a small ratio of high and low resistive states (R-ratio). According to the density functional theory (DFT) calculation results of energy band diagrams, instead of conductive filament formation in other resistive switching materials, the doping of sulfur vacancy (V-S) of 3.8% is already enough to change the whole HfS2 layer from the semiconductor to the metal. The transition is caused by the change in the V-S doping concentration from low to high, which is the result of the generation and movement of V-S under an electric field. The DFT also calculated that HfS2 devices utilizing Indium Tin Oxide as the bottom electrode can show bipolar resistive switching behavior with lower switching voltage and a higher R-ratio than those utilizing p(+)-Si, which is confirmed by the experimental results. The DFT calculation can be utilized for both explaining the switching mechanism and designing the device structure to optimize the switching characteristics.

Charge transport and bipolar switching mechanism in a Cu/HfO2/Pt resistive switching cell

Charge Transport and Bipolar Switching Mechanism in a Cu/HfO 2 /pt Resistive Switching Cell

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Resistive switching mechanism of Ag/ZrO 2 :Cu/Pt memory cell

Resistive Switching Mechanisms Relating to Oxygen Vacancies Migration in Both Interfaces in Ti/Hfox/Pt Memory Devices

Resistive Switching Characteristics of Pt/TaOx/HfNx Structure and Its Performance Improvement

Dependent of Switching Polarity for HfOx-based Memory on Doping Content and Current

Electric Characteristics and Resistive Switching Mechanism of Ni/Hfo2/Pt Resistive Random Access Memory Cell

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature.

Resistive switching behaviors and mechanisms of HfS<sub>2</sub> film memory devices studied by experiments and density functional theory calculations

Characteristics and Mechanism of Conduction/set Process in TiN∕ZnO∕Pt Resistance Switching Random-Access Memories

Conduction Mechanism and Impedance Analysis of HfOx-based RRAM at Different Resistive States

Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-Situ Transmission Electron Microscopy

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Resistive Switching in Pt/BiFeO3/SrRuO3/SrTiO3 Heterostructures

Study on Resistive Switching Characteristics and Mechanisms of Cu/SiOx/TiN Structure Resistive Random Access Memory

Bipolar Resistive Switching Characteristics of Tin/Hfox/Ito Devices for Resistive Random Access Memory Applications

Bistable Resistance Switching of Cu/Cu: HfO2/Pt for Nonvolatile Memory Application

Uniform Bipolar Resistive Switching Properties with Self-Compliance Effect of Pt/TiO2/p-Si Devices

Nonpolar Electrical Switching Behavior in Cu–Si(Cu)Ox–Pt Stacks