Improvement of Small Signal Modeling and Parameter Extraction for AlGaN/GaN High Electron Mobility Transistor
Peng Xu,Jiangfeng Du,Shaobo Dun,Zhihong Feng,Qian Luo,Ziqi Zhao,Qi Yu
DOI: https://doi.org/10.3969/j.issn.1672-7126.2012.05.10
2012-01-01
Abstract:The prototyped AlGaN/GaN high electron mobility transistor, with a cut-off frequency of 46.2 GHz, f t, and maximum oscillation frequency of 107.8 GHz, f max, was fabricated, evaluated, modeled, and simulated. The proposed, 18-element small signal, equivalent-circuit model includes the differential resistance R fd and R fs. The negative impacts of the channel resistance and the gate leakage current on the parasite resistance, were eliminated by linearly interpolating the cold field Z-parameters, biased at different voltages, on the basis of the conventional cold field effect transistor. In addition, the intrinsic values can be easily evaluated by de-embedding the parasitic effects with hot field S-parameters. The good agreement between the measured and the simulated results show that the newly-developed model and extraction method increase the simulation precision. For instance, at a frequency ranging from 200 MHz to 40 GHz, the differences between the simulated and the measured S-parameters were found to be less than 2%.