Abstract:Two-dimensional (2D) heterostructures have attracted widespread attention for their promising prospects in the fields of electronics and optoelectronics. However, in order to truly realize 2D-material-based integrated circuits, precisely controllable fabrication of 2D heterostructures is crucial and urgently needed. Here, we demonstrate an ex situ growth method of MoSe2/MoS2 lateral heterostructures by selective selenization of a laser-scanned, ultrathin oxidized region (MoOx) on a monolayer MoS2 matrix. In our method, monolayer MoS2 is scanned by a laser with a pre-designed pattern, where the laser-scanned MoS2 is totally oxidized into MoOx. The oxidized region is then selenized in a furnace, while the unoxidized MoS2 region remains unchanged, delivering a MoSe2/MoS2 heterostructure. Unlike in situ laser direct growth methods, our method separates the laser-scanned process from the selenization process, which avoids the long time of point-by-point selenization of MoS2 by laser, making the efficiency of the synthesis greatly improved. The formation process of the heterostructure is studied by Raman spectroscopy and Auger electron spectroscopy. This simple and controllable approach to lateral heterostructures with desired patterns paves the way for fast and mass integration of devices based on 2D heterostructures.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c00725?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c00725</a>.MoS2 synthesis; PL and Raman characterizations of the MoS2/MoSe2 heterostructure; Auger characterization of LS-MoS2 with different oxidation degrees after selenization; diffraction images of partially oxidized MoS2 and pristine MoS2; optical and Raman characterizations of the transition region between the MoS2 and MoSe2 regions; AFM and KPFM characterizations; schematic illustration of device fabrication; and ID–VG curve of the MoSe2 device (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c00725/suppl_file/am1c00725_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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