Abstract:We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on Poly-phenylenevinylene derivatives. We observe a direct influence of the dielectric surface on the field-effect mobility as well as on the charge injection at the source electrode, despite the fact that we used a top contact transistor structure.We find that the presence of traps at the dielectric surface, decreases the hole mobility and increases the threshold voltages. By treating the silicon dioxide dielectric surface with gas phase molecules such as octadecyltrichlorosilane (OTS) and hexamethyldisilazane (HMDS) the hole mobility improves and the threshold voltage slightly increases.The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related to the density of the oxydryl groups (-OH), which are the most efficient traps for the charges flowing in the device. We use different polymer species such as polyvinylalchol (PVA), polymethylmetacrilate (PMMA) and a cyclotene derivative (B-staged bisbenzocyclobutene or BCB). The elimination of the -OH groups and of other traps, produces the same effect observed with HMDS coupled to a more pronounced enhancement of the threshold voltage, with the exception of PMMA. The electrical characteristics obtained with HMDS and PMMA polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.We confirm that the purification of the active material is crucial to enhance the device performances and to achieve a better device to device reproducibility.We also investigated the effect of the dispersion of a phosphorescent dye into the active polymeric material. The electrical characteristics of OFETs with HMDS or PMMA dielectric with and without dye doping are compared.

[Ir(ppy)(2)pyim]pf6 Dielectric Mixed with Pmma for Area Emission Transistors

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Application of Heteroleptic Iridium Complexes with Fluorenyl-Modified 1-Phenylisoquinoline Ligand for High-Efficiency Red Polymer Light-Emitting Devices

Solution-processed light-emitting dielectric films and their applications in transistors

Solution-Processed Light-Emitting Dielectric Films and Their Applications in Multifunctional Devices

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

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Green Iridium Complexes Based on Pyrimidine Derivatives for Efficient Electroluminescence with EQE Near 30%

P-n Metallophosphor based on cationic iridium(III) complex for solid-state light-emitting electrochemical cells

Solution-processed Blue–green Organic Light-Emitting Diodes Based on Cationic Iridium Complexes with 1-Pyridyl-3-methylimidazolin-2-ylidene-c,c2′ As the Ancillary Ligand

Efficient Blue-Green and Green Electroluminescent Devices Obtained by Doping Iridium Complexes into Hole-Block Material As Supplementary Light-Emitting Layer

CH3NH3PbI3 Single Crystal-Based Ambipolar Field-Effect Transistor with Ta2O5 As the Top Gate Dielectric

Syntheses, Photoluminescence, and Electroluminescence of Iridium(III) Complexes with Fluorinated 2‐phenylpyridine As Main Ligands and Tertraphenylimidodiphosphinate As Ancillary Ligand

Highly Efficient Polymer Light-Emitting Devices Using A New Phosphorescent Material

Revealing The Working Mechanism Of Polymer Photodetectors With Ultra-High External Quantum Efficiency

Doping effect of Ir(ppy)3 on white-light electrophosphorescent devices based on platinum(II) [1, 3-difluoro-4, 6-di(2-pyridinyl)benzene] chloride.

A Series of Red‐Light‐Emitting Ionic Iridium Complexes: Structures, Excited State Properties, and Application in Electroluminescent Devices

Tuning the Charge‐Transport Property of Pyromellitic Diimide‐Based Conjugated Polymers Towards Efficient Field‐Effect Transistors

Photoinduced electron transfer for improved FET performance based on the hybrid film of an amphiphilic perylene diimide and CdS

Highly Efficient Pure Red Organic Light-Emitting Devices Based on Tris(1-Phenyl-isoquinoline) Iridium(iii) with Another Wide Gap Iridium(iii) Complex As Sensitizer