Effect of Ar+ Ion Post-Irradiation on Crystal Structure, Magnetic Behavior and Optical Band Gap of Co-implanted ZnO Wafers

N. N. Xu,G. P. Li,Q. L. Lin,H. Liu,L. M. Bao
DOI: https://doi.org/10.1016/j.ssc.2016.09.008
IF: 1.934
2016-01-01
Solid State Communications
Abstract:Single crystals wurtzite ZnO with (001) orientation were implanted with Co+ ions at room temperature (RT). To tune their magnetic behavior as well as the band gap of the implanted wafers, Ar+ ion post-irradiation (PI) was performed using the calculated energy and ion dose. The formed Co clusters present in the high dose Co-implanted ZnO wafer were observed to be absent after the PI, which is quite different from the low dose doped one. It is found that all the implanted samples showed a giant magnetic moment and a narrowing optical band gap, and that the post-irradiated ones exhibited an even further redshifted absorption edge and ferromagnetic behavior but with saturation magnetization (M-S) drastically decreased.
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