Abstract:The low-density parity-check code (LDPC) has been widely used to significantly enhance the reliability of 3-D NAND flash memory. However, in cases where the raw bit error rate (RBER) of the data is high, it not only demands more sense levels but also requires a large number of iterations, leading to a notable read latency issue. To mitigate this challenge, this paper introduces an innovative lightweight latency decrease (LLD) scheme. Initially, by examining the correlation between the number of iterations and the hard decision level (HDL), a functional model that encapsulates the relationship between iteration and offset is established. Building upon this model, the all-wordlines latency decrease (AWLD) scheme is proposed. In an effort to further decrease latency, an in-depth analysis of the similarities among different wordlines within a flash memory block is conducted, leading to the development of an optimized one-wordline lightweight latency decrease (OWLLD) scheme. For scenarios involving random reading of small data volumes, the interplay between function models of various overlapping regions is delved into, which ultimately results in the proposal of a further optimized one-page lightweight latency decrease (OPLLD) scheme. Experimental findings reveal that the OPLLD scheme can enhance the iterative performance of LDPC by up to 94.63% and reduce latency by up to 66.89% compared to traditional algorithms, while incurring minimal storage and computational overhead. This clearly indicates that the proposed scheme substantially enhances the read latency performance of LDPC in flash memory.

A Novel Speed-Up Coding Method in Quadruple-Level-cell 3D NAND Flash Memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

QLC NAND study and enhanced Gray coding methods for sixteen-level-based program algorithms

Protograph QC-LDPC and Rate-Adaptive Polar Codes Design for MLC NAND Flash Memories.

Latency Variation Aware Read Performance Optimization on 3D High Density NAND Flash Memory.

Exploiting Asymmetric Errors for LDPC Decoding Optimization on 3D NAND Flash Memory

LIAD: A Method for Extending the Effective Time of 3-D TLC NAND Flash Hard Decision

A New 3D NAND Flash Structure to Improve Program/erase Operation Speed

Interleaved LDPC Decoding Scheme Improves 3-D TLC NAND Flash Memory System Performance

TCSE: A Target Cell States Elimination Coding Strategy for Highly Reliable Data Storage Based on 3-D NAND Flash Memory

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

Channel Modeling and Quantization Design for 3D NAND Flash Memory

Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory

A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density

Reducing Latency Overhead Caused by Using LDPC Codes in NAND Flash Memory.

Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory

Exploiting Intracell Bit-Error Characteristics to Improve Min-Sum LDPC Decoding for MLC NAND Flash-Based Storage in Mobile Device

A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory

Improving min-sum LDPC decoding throughput by exploiting intra-cell bit error characteristic in MLC NAND flash memory

Polar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory

LLD: Lightweight Latency Decrease Scheme of LDPC Hard Decision Decoding for 3-D TLC NAND Flash Memory