Non-volatile Magnetic Decoder Based on MTJs

E. Y. Deng,G. Prenat,L. Anghel,W. S. Zhao
DOI: https://doi.org/10.1049/el.2016.2450
2016-01-01
Electronics Letters
Abstract:Spin transfer torque based magnetic tunnel junction (STT-MTJ) is under intense investigation for the design of hybrid spintronics/CMOS circuits. A novel non-volatile magnetic decoder (MD) based on MTJs is presented. Its output data is stored into a pair of MTJs in non-volatile state. The proposed MD promises area efficiency by sharing the same sense amplifier for normal CMOS-based dynamic decoder mode and non-volatile data sensing mode. Moreover, the symmetric structure largely weakens the impact of sneak current and ensures reliable sensing. By using a compact STT-MTJ model and the STMicroelectronics CMOS 28 nm design kit for CMOS counterparts, transient and Monte Carlo simulations are performed to validate its functionality and evaluate its performance merits.
What problem does this paper attempt to address?