Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors
Yang Ming Fu,Hu Li,Long Huang,Tianye Wei,Faricha Hidayati,Aimin Song
DOI: https://doi.org/10.1002/aelm.202200463
IF: 6.2
2022-07-19
Advanced Electronic Materials
Abstract:Modulated metaplasticity behaviors, including the spiking‐width‐dependent metaplasticity, spiking‐height‐dependent metaplasticity, and threshold‐tunable Bienenstock‐Cooper‐Munro learning rules, are successfully mimicked on the indium‐gallium‐zinc‐oxide thin‐film transistors gated with sputtered SiO2 electrolytes. A physical model based on the resistor–capacitor (RC) circuit charging, the electric‐double‐layer coupling, and the stretched exponential diffusion, which fits the experimental data well, is proposed for the mimicked metaplasticity behaviors. Electrolyte‐gated transistors have been proposed as promising candidates for neuromorphic applications. Synaptic plasticity behaviors and most recently synaptic metaplasticity or plasticity of plasticity behaviors have been mimicked on electrolyte‐gated transistors. In this work, indium‐gallium‐zinc‐oxide thin‐film transistors gated with sputtered SiO2 electrolytes are fabricated. Both spiking‐width‐dependent and spiking‐height‐dependent metaplasticity behaviors are successfully mimicked. The effects are modulated by the drain voltage bias. A physical model based on the electric‐double‐layer coupling, the RC circuit theory, and the stretched‐exponential diffusion is proposed for the metaplasticity behaviors. The experiment data have been well fitted by the proposed model. Meanwhile, the Bienenstock, Cooper, and Munro learning rule, which describes the threshold‐tunable, spiking‐rate‐dependent plasticity behaviors, is also successfully emulated, providing insight into the synaptic metaplasticity behaviors in electrolyte‐gated synaptic transistors.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology