Patterned Growth of P‐Type MoS2 Atomic Layers Using Sol–Gel As Precursor

Wei Zheng,Junhao Lin,Wei Feng,Kai Xiao,Yunfeng Qiu,XiaoShuang Chen,Guangbo Liu,Wenwu Cao,Sokrates T. Pantelides,Wu Zhou,PingAn Hu

DOI: https://doi.org/10.1002/adfm.201602494

IF: 19

2016-01-01

Advanced Functional Materials

Abstract:2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n‐type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p‐type behavior, however, remains challenging. Here, a novel one‐step growth has been developed to attain p‐type MoS2 layers in large scale by using Mo‐containing sol–gel, including 1% tungsten (W). Atomic‐resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as‐grown MoS2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p‐type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft‐lithography techniques, which enables patterned growth of p‐type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Furthermore, an atomically thin p–n junction is fabricated by the as‐prepared MoS2, which shows strong rectifying behavior.