Abstract:Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo 2 I 3 Br 3 is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo 2 I 3 Br 3 . We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo 2 I 3 Br 3 , respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo 2 I 3 Br 3 can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo 2 I 3 Br 3 , transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo 2 I 3 Br 3 is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.

Strongly Enhanced Superconductivity in Doped Monolayer Mos2 by Strain

Biaxial Strain Engineering on the Superconducting Properties of MgB2 Monolayer

Electronic and optical properties of strain-regulated O-doped monolayer MoS2

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Periodic Modulation of the Doping Level in Striped Mos2 Superstructures

Bandgap Engineering of Monolayer Mos2 under Strain: A Dft Study

First-principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phonon Coupling in Graphene.

Strain Effect On The Superconductivity In Borophenes

Gated Tuned Superconductivity and Phonon Softening in Monolayer and Bilayer MoS2

Effect of Strain on the Band Gap of Monolayer MoS$_2$

Strain-Induced Isostructural and Magnetic Phase Transitions in Monolayer MoN2

Electronic structure and magnetism manipulation of non-metal-doped monolayer chromium disulfide under strain

Strain Effect Engineered in Α-Al2o3/monolayer MoS2 Interface by First Principle Calculations

Gated Tuned Superconductivity and Phonon Softening in Mono- and Bilayer MoS$_2$

Strain Driven Anomalous Anisotropic Enhancement in the Thermoelectric Performance of monolayer MoS$_{2}$

Modulation of Spin Dynamics in 2D Transition‐Metal Dichalcogenide via Strain‐Driven Symmetry Breaking

First-principles calculations of the electronic, optical properties and quantum capacitance of Mn doped Sc 2 CO 2 monolayer under biaxial strain

Strain enhanced superconductivity of Mo$X_2$ ($X$=S or Se) bilayers with Na intercalation

Theory of superconductivity in hole-doped monolayer MoS$_{2}$

Strain Effects in Superlattices of Diluted Magnetic Semiconductor ZnTe/Zn1-xMnxTe

Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3 via strain and doping