Abstract:Tunable photoluminescent nitrogen-doped graphene and graphitic carbon nitride (g-C3N4) quantum dots are synthesized via a facile solid-phase microwave-assisted (SPMA) technique utilizing the pyrolysis of citric acid and urea precursors. The atomic ratio, surface functionalization, and atomic structure of as-prepared quantum dots strongly depend on the ratio of citric acid to urea. The quantum dots have a homogeneous particle size and tend to form a circle and/or ellipse shape to minimize the edge free energy. The atomic ratio of surface nitrogen to carbon (N/C) in the quantum dots can reach as high as 1.74, among the highest values reported in the literature. The SPMA technique is capable of producing high-quality quantum dots with photoluminescence (PL) emission at various wavelengths on a pilot scale. The atomic structures of the N-doped graphene and g-C3N4 quantum dots are explored using molecular dynamics simulations. Increasing the urea concentration increases the tendency of in-plane N (i.e., quaternary N) substitution over that of other amino functionalizations, such as pyrrolic and pyridinic N. The PL emission can be precisely tuned via a one-step SPMA method by adjusting the precursor composition. A high quantum yield of 38.7% is achieved with N-doped graphene quantum dots, indicating the substantial influence of the N- and O-rich edge groups on the enhancement of PL efficiency. A bandgap structure is proposed to describe the interstate (π*–π) transition of quantum dots. This work introduces a novel approach for engineering the chemical composition and atomic structure of graphene and g-C3N4 quantum dots, facilitating their research and applications in optical, electronic, and biomedical devices.

Engineering the electronic structure and optical properties of g-C3N4 by non-metal ion doping

The Effects of Nonmetal Dopants on the Electronic, Optical and Chemical Performances of Monolayer G–c3n4 by First-Principles Study

Analysis of Electrical and Optical Properties of g-C3N4 with Carbon-Position Doping

Microwave growth and tunable photoluminescence of nitrogen-doped graphene and carbon nitride quantum dots

Controllable Synthesis for Carbon Self-Doping and Structural Defect Co-Modified G-C3n4: Enhanced Photocatalytic Oxidation Performance and the Mechanism Insight

Insight into the Effect of Boron Doping on Electronic Structure, Photocatalytic and Adsorption Performance of G-C3n4 by First-Principles Study

A strategy of enhancing the photoactivity of g-C 3N 4 via doping of nonmetal elements: A first-principles study

Revealing the Underlying Absorption and Emission Mechanism of Nitrogen Doped Graphene Quantum Dots.

Interstitial Boron Doping Effects on the Electronic and Magnetic Properties of Graphitic Carbon Nitride Materials

Carbon Self-Doping Induced High Electronic Conductivity And Photoreactivity Of G-C3n4

Effect of boron and phosphorus codoping on the electronic and optical properties of graphitic carbon nitride monolayers: First-principle simulations

Insights into the structural variation and photocatalytic performance of g-C3N4 via doping N, O and S atoms

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Tuning the Electronic and Magnetic Properties of Porous Graphene-Like Carbon Nitride Through 3d Transition-Metal Doping

Mechanical Properties of Doped G-C3n4 – A First-Principle Study

Electronic structures and physical properties of Mg, C, and S doped g-GaN

Study on Photoelectric Properties of Fe-Co Codoped G-C3n4

Band structure tuning of g-C 3 N 4 via sulfur doping for broadband near-infrared ultrafast photonic applications

Structure and Photoluminescence of Boron and Nitrogen Co-Doped Carbon Nanorods

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure