Plasmons of Topological Crystalline Insulator SnTe with Nanostructured Patterns

Huan Wang,Jianfeng Wang,Tong Wang,Menglei Li,Lu Zhao,Alexandre Vial,Wenhui Duan

DOI: https://doi.org/10.1039/c6ra06322e

IF: 4.036

2016-01-01

RSC Advances

Abstract:Using the finite-difference time-domain method and density functional theory, we theoretically investigate the plasmons of topological crystalline insulator (TCI) SnTe with nanostructured patterns.

What problem does this paper attempt to address?

Electronic properties of SnTe-class topological crystalline insulator materials*

Jianfeng Wang,Na Wang,Huaqing Huang,Wenhui Duan

DOI: https://doi.org/10.1088/1674-1056/25/11/117313

2016-01-01

Chinese Physics B

Abstract:The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations, and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.
Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

Duming Zhang,Hongwoo Baek,Jeonghoon Ha,Tong Zhang,Jonathan E. Wyrick,Albert V. Davydov,Young Kuk,Joseph A. Stroscio

DOI: https://doi.org/10.1103/PhysRevB.89.245445

2014-05-06

Abstract:Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked surface states; but they only exist on specific crystal planes that are protected by crystal reflection symmetry. Here, we report an ultra-low temperature scanning tunneling microscopy and spectroscopy study on topological crystalline insulator SnTe nanoplates grown by molecular beam epitaxy. We observed quasiparticle interference patterns on the SnTe (001) surface that can be interpreted in terms of electron scattering from the four Fermi pockets of the topological crystalline insulator surface states in the first surface Brillouin zone. A quantitative analysis of the energy dispersion of the quasiparticle interference intensity shows two high energy features related to the crossing point beyond the Lifshitz transition when the two neighboring low energy surface bands near the point merge. A comparison between the experimental and computed quasiparticle interference patterns reveals possible spin texture of the surface states.

Mesoscale and Nanoscale Physics
Topological Crystalline Insulators in the SnTe Material Class

Timothy H. Hsieh,Hsin Lin,Junwei Liu,Wenhui Duan,Arun Bansil,Liang Fu

DOI: https://doi.org/10.1038/ncomms1969

2012-07-01

Abstract:Topological crystalline insulators are new states of matter in which the topological nature of electronic structures arises from crystal symmetries. Here we predict the first material realization of topological crystalline insulator in the semiconductor SnTe, by identifying its nonzero topological index. We predict that as a manifestation of this nontrivial topology, SnTe has metallic surface states with an even number of Dirac cones on high-symmetry crystal surfaces such as {001}, {110} and {111}. These surface states form a new type of high-mobility chiral electron gas, which is robust against disorder and topologically protected by reflection symmetry of the crystal with respect to {110} mirror plane. Breaking this mirror symmetry via elastic strain engineering or applying an in-plane magnetic field can open up a continuously tunable band gap on the surface, which may lead to wide-ranging applications in thermoelectrics, infrared detection, and tunable electronics. Closely related semiconductors PbTe and PbSe also become topological crystalline insulators after band inversion by pressure, strain and alloying.

Materials Science,Mesoscale and Nanoscale Physics
Anisotropic Superconductivity in the Topological Crystalline Metal Pb1/3TaS2 with Multiple Dirac Fermions

Xiaohui Yang,Tonghua Yu,Chenchao Xu,Jialu Wang,Wanghua Hu,Zhuokai Xu,Tao Wang,Chao Zhang,Zhi Ren,Zhu-an Xu,Motoaki Hirayama,Ryotaro Arita,Xiao Lin

DOI: https://doi.org/10.1103/physrevb.104.035157

2021-01-01

Abstract:Topological crystalline metals and semimetals (TCMs) have stimulated great research interest, which broadens the classification of topological phases and provides a valuable platform to explore topological superconductivity. Here, we report the discovery of superconductivity and topological features in Pb-intercalated transition-metal dichalcogenide Pb1/3TaS2. Systematic measurements indicate that Pb1/3TaS2 is a quasi-two-dimensional (q-2D) type-II superconductor (T-c approximate to 2.8 K) with a significantly enhanced anisotropy of upper critical field (gamma H-c2 = H-c2(ab) / H-c2(c) approximate to 17). In addition, first-principles calculations reveal that Pb1/3TaS2 hosts multiple topological Dirac fermions in the electronic band structure. We discover four groups of Dirac nodal lines on the k(z) = pi plane and two sets of Dirac points on the rotation or screw axes, which are protected by crystalline symmetries and robust against spin-orbit coupling (SOC). Dirac-cone-like surface states emerge on the (001) surface because of band inversion. Our work shows that the TCM candidate Pb1/3TaS2 is a promising arena to study the interplay between superconductivity and topological Dirac fermions.
Synthesis and characterisation of nanomaterials of the topological crystalline insulator SnTe

M. Saghir,M. R. Lees,S. J. York,G. Balakrishnan

DOI: https://doi.org/10.1021/cg500122b

2014-04-03

Abstract:A new class of materials, Topological Crystalline Insulators (TCIs) have been shown to possess exotic surface state properties that are protected by mirror symmetry. These surface features can be enhanced if the surface-area-to-volume ratio of the material increases, or the signal arising from the bulk of the material can be suppressed. We report the experimental procedures to obtain high quality crystal boules of the TCI, SnTe, from which nanowires and microcrystals can be produced by the vapour-liquid-solid (VLS) technique. Detailed characterisation measurements of the bulk crystals as well as of the nanowires and microcrystals produced are presented. The nanomaterials produced were found to be stoichiometrically similar to the source material used. Electron back-scatter diffraction (EBSD) shows that the majority of the nanocrystals grow in the vicinal {001} direction to the growth normal. The growth conditions to produce the different nanostructures of SnTe have been optimised.

Materials Science,Mesoscale and Nanoscale Physics,Other Condensed Matter,Strongly Correlated Electrons
Role of topological surface states and mirror symmetry in topological crystalline insulator SnTe as an efficient electrocatalyst

Qing Qu,Bin Liu,Hongtao Liu,Jing Liang,Jiannong Wang,Ding Pan,Iam Keong Sou

DOI: https://doi.org/10.1039/d1nr05089c

IF: 6.7

2021-01-01

Nanoscale

Abstract:The intrinsic activities of SnTe (001) and (111) surfaces with robust topological surface states (TSSs) are superior to that of a (211) surface with fragile or without TSSs, attributing to the enhanced charge transfer between H atoms and TSSs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Strain-induced two-dimensional topological crystalline insulator

Liwei Jing,Mohammad Amini,Adolfo O. Fumega,Orlando J. Silveira,Jose L. Lado,Peter Liljeroth,Shawulienu Kezilebieke

2024-10-09

Abstract:Topological crystalline insulators (TCIs) host topological phases of matter protected by crystal symmetries. Topological surface states in three-dimensional TCIs have been predicted and observed in IV-VI SnTe-class semiconductors. Despite the prediction of a two-dimensional (2D) TCI characterized by two pairs of edge states inside the bulk gap, materials challenges have thus far prevented its experimental realization. Here we report the growth and characterization of bilayer SnTe on the 2$H$-NbSe$_2$ substrate by molecular beam epitaxy and scanning tunneling microscopy. We experimentally observe two anticorrelated, periodically modulated pairs of conducting edge states along the perimeters of the sample with a large band gap exceeding $0.2$ eV. We identify these states with a 2D TCI through first principles calculations. Finally, we probe the coupling of adjacent topological edge states and demonstrate the resulting energy shift driven by a combination of electrostatic interactions and tunneling coupling. Our work opens the door to investigations of tunable topological states in 2D TCIs, of potential impact for spintronics and nanoelectronics applications at room temperature.

Mesoscale and Nanoscale Physics,Materials Science
First-principles study of the topological surface states of -Sn(111)

Zhibin Shi,Xiaoxiong Wang,Caizhi Xu,Peng Wang,Yang Liu,T-C Chiang

DOI: https://doi.org/10.1016/j.physleta.2020.126782

IF: 2.707

2020-01-01

Physics Letters A

Abstract:alpha-Sn is on the boundary of a couple of distinct topological phases. It will transform into a topological insulator under a suitable strain. However, a clear picture of its topological surface states (TSSs) is still lacking. Here we perform first-principles calculations on the electronic structure of alpha-Sn(111) surface to identify its TSSs and reveal their properties. The results show that the presence of valence band reorganizes the TSSs in the inverted sp gap into two Dirac cones. The lower one is in the valence band continuum; the upper one resides in the gap between the valence and conduction bands. We also demonstrate the transformation of the surface states by switching on or off of strain and/or spinorbit coupling. Without spin-orbit coupling, only the TSSs associated with the lower Dirac cone survive, and they are spin unpolarized. The results are useful for understanding and engineering the topological properties of alpha-Sn. (C) 2020 Elsevier B.V. All rights reserved.
Material Realization of Topological Crystalline Insulators: Role of Strain and Spin-Orbit Coupling

Chengwang Niu,Ying Dai,Yandong Ma,Lin Yu,Baibiao Huang

DOI: https://doi.org/10.1166/mex.2013.1112

2013-01-01

Materials Express

Abstract:Taking into consideration of the mirror symmetry gives rise to a new phase of quantum matter, called topological crystalline insulator (TCI). Here, using SnTe and PbTe as the examples, we give detailed insight into the effects of spin-orbit coupling (SOC) and strain on the formation of the TCI. A strain-induced band inversion, without any SOC, is shown. The SOC, however, is indispensable for achieving the TCI phase in real materials and can promote the process of the band inversion. Detailed surface state analysis reveals that topological surface state is thickness dependent and the Dirac point can locate precise on or slightly away from the mirror-symmetry point. Our results pave a way of the material realization of new topological crystalline insulator.
Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Fei Wang,Hongrui Zhang,Jue Jiang,Yi-Fan Zhao,Jia Yu,Wei Liu,Da Li,Moses H. W. Chan,Jirong Sun,Zhidong Zhang,Cui-Zu Chang

DOI: https://doi.org/10.1103/PhysRevB.97.115414

2018-02-27

Abstract:Topological crystalline insulator (TCI) is a recently-discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular beam epitaxy to grow 12 double layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)2Te3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is ~ 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (~1/4 h/e2). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Mesoscale and Nanoscale Physics
Topologically Nontrivial Interband Plasmons in Type-Ii Weyl Semimetal MoTe2

Xun Jia,Maoyuan Wang,Dayu Yan,Siwei Xue,Shuyuan Zhang,Jianhui Zhou,Youguo Shi,Xuetao Zhu,Yugui Yao,Jiandong Guo

DOI: https://doi.org/10.1088/1367-2630/abbca5

2020-01-01

New Journal of Physics

Abstract:In many realistic topological materials, more than one kind of fermions contribute to the electronic bands crossing the Fermi level, leading to various novel phenomena. Here, using momentum-resolved inelastic electron scattering, we investigate the plasmons and their evolution across the phase transition in a type-II Weyl semimetal MoTe2, in which both Weyl fermions and trivial electrons contribute to the Fermi surface in the Td phase. One plasmon mode in the 1T′ phase at high temperature and two plasmon modes in the topological Td phase at low temperature are observed. Combining with first-principles calculations, we show that all the plasmon modes are dominated by the interband correlations between the inverted bands of MoTe2. Especially in the Td phase, since the electronic bands split due to inversion symmetry breaking and spin–orbit coupling, the plasmon modes manifest the interband correlation between the topological Weyl fermions and the trivial electrons. Our work emphasizes the significance of the interplay between different kinds of carriers in plasmons of topological materials.
Density Functional Theory Study of the Spin–Orbit Insulating Phase in SnTe Cubic Nanowires: Implications for Topological Electronics

Ghulam Hussain,Kinga Warda,Giuseppe Cuono,Carmine Autieri

DOI: https://doi.org/10.1021/acsanm.4c00506

IF: 6.14

2024-03-27

ACS Applied Nano Materials

Abstract:We investigate the electronic, structural, and topologicalpropertiesof the SnTe and PbTe cubic nanowires using ab initio calculations. Using standard and linear-scale density functionaltheory, we go from the ultrathin limit up to the nanowire thicknessesobserved experimentally. Finite-size effects in the ultrathin limitproduce an electric quadrupole and associated structural distortions;these distortions increase the band gap, but they get reduced withthe size of the nanowires and become less and less relevant. UltrathinSnTe cubic nanowires are trivial band gap insulators; we demonstratethat by increasing the thickness, there is an electronic transitionto a spin–orbit insulating phase due to trivial surface statesin the regime of thin nanowires. These trivial surface states witha spin–orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thicknanowires, we should observe the transition to the topological crystallineinsulator phase with the presence of two massive surface Dirac fermionshybridized with the persistent trivial surface states. Therefore,we have the copresence of massive Dirac surface states and trivialsurface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowiresare trivial insulators below the critical thickness tc1 = 10 nm, and they become spin–orbitinsulators between tc1 = 10 nm and tc2 = 17nm, while they transit to the topological phase above the criticalthickness of tc2 = 17nm. These critical thickness values are in the range of typical experimentalthicknesses, making the thickness a relevant parameter for the synthesisof topological cubic nanowires. Pb1–xSnxTe nanowires would have boththese critical thicknesses tc1 and tc2 at largervalues depending on the doping concentration. We discuss the limitationsof density functional theory in the context of topological nanowiresand the consequences of our results on topological electronics.

materials science, multidisciplinary,nanoscience & nanotechnology
Topologically Nontrivial Interband Plasmons in Type-II Weyl Semimetal MoTe$_2$

Xun Jia,Maoyuan Wang,Dayu Yan,Siwei Xue,Shuyuan Zhang,Jianhui Zhou,Youguo Shi,Xuetao Zhu,Yugui Yao,Jiandong Guo

DOI: https://doi.org/10.1088/1367-2630/abbca5

2020-07-31

Abstract:In many realistic topological materials, more than one kind of fermions contribute to the electronic bands crossing the Fermi level, leading to various novel phenomena. Here, using momentum-resolved inelastic electron scattering, we investigate the plasmons and their evolution across the phase transition in a type-II Weyl Semimetal MoTe$_2$, in which both Weyl fermions and trivial nonrelativistic fermions contribute to the Fermi surface in the Td phase. One plasmon mode in the 1T' phase at high temperature and two plasmon modes in the topological T$_d$ phase at low temperature are observed. Combining with first-priciples calculations, we show that all the plasmon modes are dominated by the interband correlations between the inverted bands of MoTe$_2$. Especially in the T$_d$ phase, since the electronic bands split due to inversion symmetry breaking and spin-orbit coupling, the plasmon modes manifest the interband correlation between the topological Weyl fermions and the trivial nonrelativistic electrons. Our work emphasizes the significance of the interplay between different kinds of carriers in plasmons of topological materials.

Materials Science,Mesoscale and Nanoscale Physics
Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Yan Gong,Kejing Zhu,Zhe Li,Yunyi Zang,Xiao Feng,Ding Zhang,Canli Song,Lili Wang,Wei Li,Xi Chen,Xu-Cun Ma,Qi-Kun Xue,Yong Xu,Ke He

DOI: https://doi.org/10.1007/s12274-018-2120-y

IF: 9.9

2018-01-01

Nano Research

Abstract:Using in situ angle-resolved photoemission spectroscopy, we systematically studied molecular-beam-epitaxy-grown topological crystalline insulator SnTe(111) thin films with varied thicknesses and substrate conditions. An oscillation in the band gap size with an increase in thickness was observed to depend on the electric field perpendicular to the films. The observations are consistent with the theoretically predicted thickness- and electric-field-dependent topological phase transitions between the normal insulator and the quantum spin Hall insulator phases in SnTe(111) films and demonstrate them to be an excellent and electrically tunable quantum spin Hall system.
Defect Energetics and Magnetic Properties of 3D-Transition-metal-doped Topological Crystalline Insulator SnTe

Na Wang,JianFeng Wang,Chen Si,Bing-Lin Gu,WenHui Duan

DOI: https://doi.org/10.1007/s11433-016-0197-1

2016-01-01

Science China Physics Mechanics and Astronomy

Abstract:The introduction of magnetism in SnTe-class topological crystalline insulators is a challenging subject with great importance in the quantum device applications. Based on the first-principles calculations, we have studied the defect energetics and magnetic properties of 3d transition-metal (TM)-doped SnTe. We find that the doped TM atoms prefer to stay in the neutral states and have comparatively high formation energies, suggesting that the uniform TM doping in SnTe with a higher concentration will be difficult unless clustering. In the dilute doping regime, all the magnetic TM atoms are in the high-spin states, indicating that the spin splitting energy of 3d TM is stronger than the crystal splitting energy of the SnTe ligand. Importantly, Mn-doped SnTe has relatively low defect formation energy, largest local magnetic moment, and no defect levels in the bulk gap, suggesting that Mn is a promising magnetic dopant to realize the magnetic order for the theoretically-proposed large-Chern-number quantum anomalous Hall effect (QAHE) in SnTe.
Two Types Of Surface States In Topological Crystalline Insulators

Junwei Liu,Wenhui Duan,Liang Fu

DOI: https://doi.org/10.1103/PhysRevB.88.241303

IF: 3.7

2013-01-01

Physical Review B

Abstract:Topological crystalline insulators (TCIs) are new states of matter whose topological distinction relies on the crystal symmetry of periodic solids. The first material realization of TCIs has recently been predicted and observed in IV-VI semiconductor SnTe and related alloys. By combining k . p theory and band structure calculation, we present a unified approach to study topological surface states on various crystal surfaces of these TCI materials based on the electronic structure of the bulk. Depending on the surface orientation, we find two types of surface states with qualitatively different properties. In particular, the (111) surface states consist of four Dirac cones centered at (Gamma) over bar and (M) over bar, while Dirac cones on (001) and (110) surfaces are located at non-time-reversal-invariant momenta. The latter types of surface states exhibit a Lifshitz transition as a function of Fermi energy, which is accompanied by a Van Hove singularity in the density of states arising from saddle points in the band structure.
Weak Anti-Localization and Quantum Oscillations in Topological Crystalline Insulator PbTe

Ke-Jie Wang,Wei Wang,Min-Hao Zhang,Xiao-Qian Zhang,Pei Yang,Bo Liu,Ming Gao,Da-Wei Huang,Jun-Ran Zhang,Yu-Jie Liu,Xue-Feng Wang,Feng-Qiu Wang,Liang He,Yong-Bing Xu,Rong Zhang

DOI: https://doi.org/10.1088/0256-307x/34/2/026201

2017-01-01

Chinese Physics Letters

Abstract:Topological crystalline insulators (TCIs) have attracted worldwide interest since their theoretical predication and have created exciting opportunities for studying topological quantum physics and for exploring spintronic applications. In this work, we successfully synthesize PbTe nanowires via the chemical vapor deposition method and demonstrate the existence of topological surface states by their 2D weak anti-localization effect and Shubnikov–de Haas oscillations. More importantly, the surface state contributes ∼61% of the total conduction, suggesting dominant surface transport in PbTe nanowires at low temperatures. Our work provides an experimental groundwork for researching TCIs and is a step forward for the applications of PbTe nanowires in spintronic devices.
Rock-salt SnS and SnSe: Native Topological Crystalline Insulators

Yan Sun,Zhicheng Zhong,Tomonori Shirakawa,Cesare Franchini,Dianzhong Li,Yiyi Li,Seiji Yunoki,Xing-Qiu Chen

DOI: https://doi.org/10.48550/arXiv.1308.5657

2013-08-22

Materials Science

Abstract:Unlike time-reversal topological insulators, surface metallic states with Dirac cone dispersion in the recently discovered topological crystalline insulators (TCIs) are protected by crystal symmetry. To date, TCI behaviors have been observed in SnTe and the related alloys Pb$_{1-x}$Sn$_{x}$Se/Te, which incorporate heavy elements with large spin-orbit coupling (SOC). Here, by combining first-principles and {\it ab initio} tight-binding calculations, we report the formation of a TCI in the relatively lighter rock-salt SnS and SnSe. This TCI is characterized by an even number of Dirac cones at the high-symmetry (001), (110) and (111) surfaces, which are protected by the reflection symmetry with respect to the ($\bar{1}$10) mirror plane. We find that both SnS and SnSe have an intrinsically inverted band structure and the SOC is necessary only to open the bulk band gap. The bulk band gap evolution upon volume expansion reveals a topological transition from an ambient pressure TCI to a topologically trivial insulator. Our results indicate that the SOC alone is not sufficient to drive the topological transition.
Non-equilibrium States and Interactions in the Topological Insulator and Topological Crystalline Insulator Phases of NaCd4As3

Tika R Kafle,Yingchao Zhang,Yi-yan Wang,Xun Shi,Na Li,Richa Sapkota,Jeremy Thurston,Wenjing You,Shunye Gao,Qingxin Dong,Kai Rossnagel,Gen-Fu Chen,James K Freericks,Henry C Kapteyn,Margaret M Murnane

2024-08-20

Abstract:Topological materials are of great interest because they can support metallic edge or surface states that are robust against perturbations, with the potential for technological applications. Here we experimentally explore the light-induced non-equilibrium properties of two distinct topological phases in NaCd4As3: a topological crystalline insulator (TCI) phase and a topological insulator (TI) phase. This material has surface states that are protected by mirror symmetry in the TCI phase at room temperature, while it undergoes a structural phase transition to a TI phase below 200 K. After exciting the TI phase by an ultrafast laser pulse, we observe a leading band edge shift of >150 meV, that slowly builds up and reaches a maximum after ~0.6 ps, and that persists for ~8 ps. The slow rise time of the excited electron population and electron temperature suggests that the electronic and structural orders are strongly coupled in this TI phase. It also suggests that the directly excited electronic states and the probed electronic states are weakly coupled. Both couplings are likely due to a partial relaxation of the lattice distortion, which is known to be associated with the TI phase. In contrast, no distinct excited state is observed in the TCI phase immediately or after photoexcitation, which we attribute to the low density of states and phase space available near the Fermi level. Our results show how ultrafast laser excitation can reveal the distinct excited states and interactions in phase-rich topological materials.

Materials Science
ARPES Study of the Epitaxially Grown Topological Crystalline Insulator SnTe(111)

Yi Zhang,Zhongkai Liu,Bo Zhou,Yeongkwan Kim,Lexian Yang,Hyejin Ryu,Choongyu Hwang,Yulin Chen,Zahid Hussain,Zhi-Xun Shen,Sung-Kwan Mo

DOI: https://doi.org/10.1016/j.elspec.2016.10.003

IF: 1.993

2016-01-01

Journal of Electron Spectroscopy and Related Phenomena

Abstract:SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular tothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar and M_bar points of the surface Brillouinzone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone,whose Dirac energy is largely different from those at the Gamma_bar and M_bar points.

Plasmons of Topological Crystalline Insulator SnTe with Nanostructured Patterns

Electronic properties of SnTe-class topological crystalline insulator materials*

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

Topological Crystalline Insulators in the SnTe Material Class

Anisotropic Superconductivity in the Topological Crystalline Metal Pb1/3TaS2 with Multiple Dirac Fermions

Synthesis and characterisation of nanomaterials of the topological crystalline insulator SnTe

Role of topological surface states and mirror symmetry in topological crystalline insulator SnTe as an efficient electrocatalyst

Strain-induced two-dimensional topological crystalline insulator

First-principles study of the topological surface states of -Sn(111)

Material Realization of Topological Crystalline Insulators: Role of Strain and Spin-Orbit Coupling

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Topologically Nontrivial Interband Plasmons in Type-Ii Weyl Semimetal MoTe2

Density Functional Theory Study of the Spin–Orbit Insulating Phase in SnTe Cubic Nanowires: Implications for Topological Electronics

Topologically Nontrivial Interband Plasmons in Type-II Weyl Semimetal MoTe$_2$

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Defect Energetics and Magnetic Properties of 3D-Transition-metal-doped Topological Crystalline Insulator SnTe

Two Types Of Surface States In Topological Crystalline Insulators

Weak Anti-Localization and Quantum Oscillations in Topological Crystalline Insulator PbTe

Rock-salt SnS and SnSe: Native Topological Crystalline Insulators

Non-equilibrium States and Interactions in the Topological Insulator and Topological Crystalline Insulator Phases of NaCd4As3

ARPES Study of the Epitaxially Grown Topological Crystalline Insulator SnTe(111)