Carrier-Tunable Magnetism in Two Dimensional Graphene-Like C2n

Zhaohuan Liang,Bo Xu,Hui Xiang,Yidong Xia,Jiang Yin,Zhiguo Liu

DOI: https://doi.org/10.1039/c6ra08254h

IF: 4.036

2016-01-01

RSC Advances

Abstract:We explore the carrier doping effect on magnetic properties in two dimensional (2D) graphene-like C2N (g-C2N) by density functional theory calculations.

What problem does this paper attempt to address?

Carrier-tunable Magnetism of Graphene with Single-Atom Vacancy

Shulai Lei,Bin Li,Erjun Kan,Jing Huang,Qunxiang Li,Jinlong Yang

DOI: https://doi.org/10.1063/1.4809562

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:We explore the carrier doping effect on magnetic properties of defective graphene with single-atom vacancy by performing spin-polarized density functional theory calculations. Theoretical results show that both hole and electron dopings can effectively modify the local magnetic moments. Besides, we also demonstrate that hole doping can greatly enhance the magnetic coupling, increasing the critical temperature of magnetism, which is absent in electron doping case. The coupling enhanced mechanism can be well understood by the different variation trends of pz-derived states around the Fermi level under hole doping. Thus, our results provide a practical way to tune the magnetism of defective graphene.
C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties

Siwei Yang,Wei Li,Caichao Ye,Gang Wang,He Tian,Chong Zhu,Peng He,Guqiao Ding,Xiaoming Xie,Yang Liu,Yeshayahu Lifshitz,Shuit-Tong Lee,Zhenhui Kang,Mianheng Jiang

DOI: https://doi.org/10.1002/adma.201605625

2017-01-01

Advances in Materials

Abstract:Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large‐scale synthesis of C3N, a 2D crystalline, hole‐free extension of graphene, its structural characterization, and some of its unique properties. C3N is fabricated by polymerization of 2,3‐diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D6h‐symmetry. C3N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back‐gated field‐effect transistors made of single‐layer C3N display an on–off current ratio reaching 5.5 × 1010. Surprisingly, C3N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications.
Tunable Half-metallic Magnetism in Atom-thin Holey Two-dimensional C$_2$N Monolayer

Sai Gong,Wenhui Wan,Shan Guan,Bo Tai,Chang Liu,Botao Fu,Shengyuan A. Yang,Yugui Yao

DOI: https://doi.org/10.1039/c7tc01399j

2017-08-28

Abstract:Exploring two-dimensional (2D) materials with magnetic ordering is a focus of current research. It remains a challenge to achieve tunable magnetism in a material of one-atom-thickness without introducing extrinsic magnetic atoms or defects. Here, based on first-principles calculations, we propose that tunable ferromagnetism can be realized in the recently synthesized holey 2D C$_2$N ($h$2D-C$_2$N) monolayer via purely electron doping that can be readily achieved by gating. We show that owing to the prominent van Hove singularity in the band structure, the material exhibits ferromagnetism even at a small doping level. Remarkably, over a wide doping range of 4$\times$10$^{13}$/cm$^2$ to 8$\times$10$^{13}$/cm$^2$, the system becomes half-metallic, with carriers fully spin-polarized. The estimated Curie temperature can be up to 320 K. Besides gating, we find that the magnetism can also be effectively tuned by lattice strain. Our result identifies $h$2D-C$_2$N as the first material with single-atom-thickness that can host gate-tunable room-temperature half-metallic magnetism, suggesting it as a promising platform to explore nanoscale magnetism and flexible spintronic devices.

Materials Science
Widely tunable carrier mobility of boron nitride-embedded graphene.

Jinying Wang,Ruiqi Zhao,Zhongfan Liu,Zhirong Liu

DOI: https://doi.org/10.1002/smll.201202978

IF: 13.3

2013-01-01

Small

Abstract:The carrier transport in boron nitride-embedded graphene (BNG) is studied using density functional theory coupled with the Boltzmann transport equation. Under a phonon scattering mechanism, the intrinsic carrier mobility of BNG at room temperature is tunable from 1.7 x 103 to 1.1 x 105 cm2 V1 s1 when the bandgap is between 0.38 and 1.39 eV. Some specific BNG materials even show ultrahigh mobility up to 6.6 x 106 cm2 V1 s1, and the transport polarity (whether it is electron or hole transport) can be tailored by the application of a uniaxial strain. The wide mobility variation of BNG is attributed to the dependence of the effective mass and the deformation potential constant on the carbon concentration and width. The results indicate that BNG can have both a large onoff ratio and high carrier mobility and is thus a promising material for electronic devices.
Exotic Ferromagnetism in the Two-Dimensional Quantum Material C3N

Wen-Cheng Huang,Wei Li,Xiaosong Liu

DOI: https://doi.org/10.1007/s11467-017-0741-3

2017-01-01

Frontiers of Physics

Abstract:The search for and study of exotic quantum states in novel low-dimensional quantum materials have triggered extensive research in recent years. Here, we systematically study the electronic and magnetic structures in the newly discovered two-dimensional quantum material C3N within the framework of density functional theory. The calculations demonstrate that C3N is an indirect-band semiconductor with an energy gap of 0.38 eV, which is in good agreement with experimental observations. Interestingly, we find van Hove singularities located at energies near the Fermi level, which is half that of graphene. Thus, the Fermi energy easily approaches that of the singularities, driving the system to ferromagnetism, under charge carrier injection, such as electric field gating or hydrogen doping. These findings not only demonstrate that the emergence of magnetism stems from the itinerant electron mechanism rather than the effects of local magnetic impurities, but also open a new avenue to designing field-effect transistor devices for possible realization of an insulator–ferromagnet transition by tuning an external electric field.
Tuning the Electronic and Magnetic Properties of Porous Graphene-Like Carbon Nitride Through 3d Transition-Metal Doping

Yanmei Yang,Meng Guo,Gang Zhang,Weifeng Li

DOI: https://doi.org/10.1016/j.carbon.2017.02.069

IF: 10.9

2017-01-01

Carbon

Abstract:We present a density-functional-theory study of the recently synthesized graphene-like carbon nitride monolayer (C2N) with transition metal atom (TM = Fe, Co and Ni) doping. We find that for three elements, the TM-C2N binding is strong and covalent in nature. While the pristine C2N is a semiconductor with non-magnetism at the ground state, the TM-C2N complexes exhibit metal characteristic and is spin-polarized. Particularly, a Fe atom on C2N can induce 3.91 mu(beta) magnetic moment with ferromagnetic coupling. For Co and Ni, smaller magnetic moment is observed with weaker coupling or even no coupling. The spin-polarization can be understood in the local-orbital picture, involving hybridizations of nitrogen's p(z) orbital with the 3d orbitals of metal. The work function of C2N can be effectively modulated by metal doping from 5.25 eV for pristine C2N to a range of 3.85-4.15 eV for doped ones. Our results indicate that the properties of C2N layer can be effectively modulated by chemical doping and the co-realization of metallic and ferromagnetic properties in doped C2N might find broad applications in the design of nanoscale electronic and spintronic devices. (C) 2017 Elsevier Ltd. All rights reserved.
Mechanism of carrier doping induced magnetic phase transitions in two-dimensional materials

Yan Lu,Haonan Wang,Li Wang,and Li Yang

DOI: https://doi.org/10.1103/PhysRevB.106.205403

2022-11-05

Abstract:Electrically tuning long-range magnetic orders has been realized in two-dimensional (2D) semiconductors via electrostatic doping. On the other hand, the observations are highly diverse: the transition can be realized by either electrons or holes or both depending on specific materials. Moreover, doped carriers seem to always favor the ferromagnetic (FM) ground state. The mechanism behind those diverse observations remains uncovered. Combining first-principles simulations, we analyze the spin superexchange paths of the correlated d/f orbitals around band edges and assign 2D magnetic semiconductors into three types by their projected density of states (PDOS). We find that each type of PDOS corresponds to a specific carrier-driven magnetic phase transition and the critical doping density and type of carriers can be quantitatively obtained by calculating the superexchange coupling strength. The model results are in good agreement with first-principles calculations and available measurements. After understanding the mechanism, we can design heterostructures to realize the FM to antiferromagnetic transition. This model is helpful to understand diverse measurements and expand the degrees of freedom to control long-range magnetic orders in 2D semiconductors. https://doi.org/10.1103/PhysRevB.106.205403 ©2022 American Physical Society
Structural modulation of bilayer graphene under an external electric field and carrier doping

Nadia Sultana,Yanlin Gao,Mina Maruyama,Susumu Okada

DOI: https://doi.org/10.35848/1882-0786/ad2ecc

IF: 2.819

2024-03-02

Applied Physics Express

Abstract:Density functional theory was used to investigate the geometric structure of bilayer graphene under an external electric field and carrier doping. Our calculations revealed the crucial impact of external electric fields and the hole injection on determining the geometric structure of bilayer graphene. The bond length of graphene monotonically increased with increasing the hole doping concentration, while it remained insensitive to electron doping. Additionally, accumulated carriers predominantly distributed in the outermost layer located just below the gate electrode. These results enabled the construction of moiré superlattices in bilayer graphene, possessing different moiré periodicity depending on carrier concentration.

physics, applied
Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures

Ping Wang,Fuzhuo Lian,Renjun Du,Xiaofan Cai,Song Bao,Yaqing Han,Jingkuan Xiao,Kenji Watanabe,Takashi Taniguchi,Jinsheng Wen,Hongxin Yang,Alexander S. Mayorov,Lei Wang,Geliang Yu

DOI: https://doi.org/10.1063/5.0178916

2024-04-28

Abstract:We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of $\rm CrI_3$ and the Fermi level of graphene, which can be controlled by the gate voltage. The coexistence of the normal and atypical quantum Hall effects in our device also corresponds to gate-control modulation doping. The lowest conduction band depends on the magnetic states of the $\rm CrI_3$ and can be altered by the magnetic field, which corresponds to the resistance loops during back-and-forth sweeps of the magnetic field. Our results serve as a reference for exploiting the magnetic proximity effects in graphene.

Mesoscale and Nanoscale Physics
Two-dimensional carbon nitride (2DCN) nanosheets: Tuning of novel electronic and magnetic properties by hydrogenation, atom substitution and defect engineering

Asadollah Bafekry,Saber Farjami Shayesteh,Francois M. Peeters

DOI: https://doi.org/10.1063/1.5120525

IF: 2.877

2019-12-07

Journal of Applied Physics

Abstract:By employing first-principles calculations within the framework of density functional theory, we investigated the structural, electronic, and magnetic properties of graphene and various two-dimensional carbon-nitride (2DNC) nanosheets. The different 2DCN gives rise to diverse electronic properties such as metals (<math> C 3 N 2</math>), semimetals (<math> C 4 N</math> and <math> C 9 N 4</math>), half-metals (<math> C 4 N 3</math>), ferromagnetic-metals (<math> C 9 N 7</math>), semiconductors (<math> C 2 N</math>, <math> C 3 N</math>, <math> C 3 N 4</math>, <math> C 6 N 6</math>, and <math> C 6 N 8</math>), spin-glass semiconductors (<math> C 10 N 9</math> and <math> C 14 N 12</math>), and insulators (<math> C 2 N 2</math>). Furthermore, the effects of adsorption and substitution of hydrogen atoms as well as N-vacancy defects on the electronic and magnetic properties are systematically studied. The introduction of point defects, including N vacancies, interstitial H impurity into graphene and different 2DCN crystals, results in very different band structures. Defect engineering leads to the discovery of potentially exotic properties that make 2DCN interesting for future investigations and emerging technological applications with precisely tailored properties. These properties can be useful for applications in various fields such as catalysis, energy storage, nanoelectronic devices, spintronics, optoelectronics, and nanosensors.

physics, applied
Effective Carrier Doping and Quantum Capacitance Manipulation of Graphene Through Two-Dimensional Solid Electrolytes of ScI3 and YBr3

Binyu Ying,Baojuan Xin,Kaixin Zou,Wentao Wu,Luyan Li,Yahui Cheng,Hong Dong,Hui Liu,Mengjian Zhu,Feng Lu,Wei-Hua Wang

DOI: https://doi.org/10.1016/j.apsusc.2023.156443

IF: 6.7

2023-01-01

Applied Surface Science

Abstract:Effective carrier doping would be expected to enhance the electrical conductivity and further improve the quantum capacitance (Cq) of graphene. In this work, two-dimensional solid electrolytes of ScI3 and YBr3 as buffer layers have been proposed to modulate the carrier density and improve the Cq. By using first-principles calcu-lations, the effective carrier doping has been examined by building heterostructures of graphene/ScI3 and gra-phene/YBr3 combined with Li, Na, K, Ca, F dopants. The n-type doping with electron density and p-type doping with hole density of graphene reach up to 1.14 x 1014 cm- 2 and 6.66 x 1013 cm-2, respectively. Remarkably, the linear band dispersions of graphene are maintained near the Dirac point. Moreover, the Cq is significantly increased around the zero bias due to the increased density of states near the Fermi level. For Li-, Na-, K-, and Ca -doped systems, the Cq in the negative bias region is effectively enhanced while the Cq is improved in the positive bias region for F-doped system. These results provide an ideal route to implement the effective carrier doping and the Cq manipulation of graphene, facilitating the applications of graphene as electrodes in high-performance optoelectronics and energy storage devices, such as light-emitting diodes, solar cells and supercapacitors.
Enhanced Itinerant d0 Ferromagnetism and Tunable Topological Properties of a Ca2C/Ca2N Heterobilayer

Guohua Cao,Shunhong Zhang,Ping Cui,Zhenyu Zhang

DOI: https://doi.org/10.1002/aelm.202300733

IF: 6.2

2024-01-09

Advanced Electronic Materials

Abstract:The weak d0 ferromagnetism in Ca2C is substantially enhanced by a proximity‐coupled electride monolayer of Ca2N, which is attributed to the straightening of the flat band. More surprisingly, the Ca2C/Ca2N heterobilayer is empowered with nontrivial band topology, characterized by a high Chern number tunable by the magnetization orientation or lateral strain. Recent studies have shown that a rich variety of exotic physical phenomena can emerge from the presence of electronic flat bands. Using first‐principles calculations, here a monolayered Ca2C possesses a relatively flat band near the Fermi level, and across the whole Brillouin zone is predicted. Next, the weak d0 ferromagnetism in Ca2C is substantially enhanced by a proximity‐coupled electride monolayer of Ca2N is shown. The enhanced magnetism can be attributed to the straightening of the flat band caused by the charge transfer to the electride, while the flattening is tied to the magic ratio of three between the σ and π channels of the effective C─C coupling strength. More surprisingly, even though each of the constituent systems is topologically trivial, the Ca2C/Ca2N heterobilayer is empowered with nontrivial band topology, characterized by a high Chern number tunable by the magnetization orientation or lateral strain. These findings provide a new platform for realizing intriguing magnetic topological metals in 2D materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Low-field magnetotransport in graphene cavity devices.

G Q Zhang,N Kang,J Y Li,Li Lin,Hailin Peng,Zhongfan Liu,H Q Xu

DOI: https://doi.org/10.1088/1361-6528/aab478

IF: 3.5

2018-01-01

Nanotechnology

Abstract:Confinement and edge structures are known to play significant roles in the electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.
Theoretical Study of Carrier Mobility in Two-Dimensional Tetragonal Carbon Allotrope from Porous Graphene

Song Gao,Hui Xiang,Bo Xu,Yi-Dong Xia,Jiang Yin,Zhi-Guo Liu

DOI: https://doi.org/10.1088/0256-307x/33/8/083101

2016-01-01

Chinese Physics Letters

Abstract:The carrier mobility of two-dimensional tetragonal carbon allotrope (T-CA) from porous graphene is investigated by first-principles calculations. T-CA can be constructed from divacancy and Stone–Thrower–Wales defects from graphene. T-CA is a direct semiconductor with a band gap of 0.4 eV at Γ point. T-CA possesses a high carrier mobility of the order of 104 cm2 V–1 s−1. As our study demonstrates, T-CA has potential applications for next-generation electronic materials.
Gate control of 2D magnetism in three- and four-layers CrI3/graphene heterostructures

Ping Wang,Fuzhuo Lian,Renjun Du,Xiaofan Cai,Song Bao,Yaqing Han,Jingkuan Xiao,Kenji Watanabe,Takashi Taniguchi,Jinsheng Wen,Hongxin Yang,Alexander S. Mayorov,Lei Wang,Geliang Yu

DOI: https://doi.org/10.1063/5.0178916

IF: 4

2024-01-01

Applied Physics Letters

Abstract:We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of CrI3. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of CrI3 and the Fermi level of graphene, which can be controlled by the gate voltage. The coexistence of the normal and atypical quantum Hall effects in our device also corresponds to gate-control modulation doping. The lowest conduction band depends on the magnetic states of the CrI3 and can be altered by the magnetic field, which corresponds to the resistance loops during back-and-forth sweeps of the magnetic field. Our results serve as a reference for exploiting the magnetic proximity effects in graphene.

physics, applied
Gate Control of 2D Magnetism in Tri- and Four-Layers CrI_3/graphene Heterostructures

Ping Wang,Fuzhuo Lian,Renjun Du,Xiaofan Cai,Song Bao,Yaqing Han,Jingkuan Xiao,Kenji Watanabe,Takashi Taniguchi,Jinsheng Wen,Hongxin Yang,Alexander S. Mayorov,Lei Wang,Geliang Yu

DOI: https://doi.org/10.1063/5.0178916

2024-01-01

Abstract:We conduct experimental studies on the electrical transport properties ofmonolayer graphene directly covered by a few layers of CrI_3. We do notobserve the expected magnetic exchange coupling in the graphene but insteaddiscover proximity effects featuring gate and magnetic field tunability. Thetunability of gate voltage is manifested in the alignment of the lowestconduction band of CrI_3 and the Fermi level of graphene, which can becontrolled by the gate voltage. The coexistence of the normal and atypicalquantum Hall effects in our device also corresponds to gate-control modulationdoping. The lowest conduction band depends on the magnetic states of the CrI_3 and can be altered by the magnetic field, which corresponds to theresistance loops during back-and-forth sweeps of the magnetic field. Ourresults serve as a reference for exploiting the magnetic proximity effects ingraphene.
Flat band carrier confinement in magic-angle twisted bilayer graphene

Nikhil Tilak,Xinyuan Lai,Shuang Wu,Zhenyuan Zhang,Mingyu Xu,Raquel de Almeida Ribeiro,Paul C. Canfield,Eva Y. Andrei

DOI: https://doi.org/10.1038/s41467-021-24480-3

IF: 16.6

2021-07-07

Nature Communications

Abstract:Abstract Magic-angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating. Techniques to control the twist angle between graphene layers have led to rapid experimental progress but improving sample quality is essential for separating the delicate correlated electron physics from disorder effects. Owing to the 2D nature of the system and the relatively low carrier density, the samples are highly susceptible to small doping inhomogeneity which can drastically modify the local potential landscape. This potential disorder is distinct from the twist angle variation which has been studied elsewhere. Here, by using low temperature scanning tunneling spectroscopy and planar tunneling junction measurements, we demonstrate that flat bands in twisted bilayer graphene can amplify small doping inhomogeneity that surprisingly leads to carrier confinement, which in graphene could previously only be realized in the presence of a strong magnetic field.

multidisciplinary sciences
Gate Tunable Kondo Effect in Magnetic Molecule Decorated Graphene

Baoming Yan,Xinqi Li,Jiaji Zhao,Zhenzhao Jia,Fangdong Tang,Zhihong Zhang,Dapeng Yu,Kaihui Liu,Liyuan Zhang,Xiaosong Wu

DOI: https://doi.org/10.1016/j.ssc.2018.05.001

IF: 1.934

2018-01-01

Solid State Communications

Abstract:The Kondo effect is one of the most widely studied many-body phenomena. Magnetic impurity decorated graphene is predicted to exhibit the Kondo effect with intriguing properties. Here we study the Kondo effect in Cobalt(II) phthalocyanine magnetic molecule decorated graphene by low temperature transport measurements. Spin-flip scattering and a logarithmic increase of resistance are observed, which confirms the Kondo effect. At a high carrier density, Kondo screening persists up to 20 K, suggesting a strong coupling between Dirac electrons and local magnetic moments of molecules. Decreasing the carrier concentration by a gate voltage results in a strong suppression of Kondo screening. Such tuning of Kondo screening can be used to turn on/off the local moment. Our results demonstrate a new Kondo system based on graphene. The significant gate tunability of the system may be used in spintronics.
Two-dimensional Graphyne-Like Carbon Nitrides: Moderate Band Gaps, High Carrier Mobility, High Flexibility and Type-Ii Band Alignment

Siyun Qi,Xikui Ma,Bo Yang,Lei Sun,Weifeng Li,Mingwen Zhao

DOI: https://doi.org/10.1016/j.carbon.2019.04.024

IF: 10.9

2019-01-01

Carbon

Abstract:Two-dimensional (2D) carbon nitrides are drawing increasing interests due to the structural diversities and unique electronic properties, superiors to the pure 2D carbon materials. Motivated by the recent experimental progresses, we investigated from first-principles a new family of 2D carbon nitrides composed of sp- and sp(2)-hybridized carbon atoms and with kagome, rhombic and hexagonal lattices. The kagome and rhombic lattices exhibit moderate electronic band gaps (0.98-3.34 eV), high carrier mobility in the order of 3 x 10(5) cm(2)V(-1)s(-1), high flexibility with critical strain up to 44%-47%, and type-II band alignment which are desired for applications in electronic devices and solar cells. Our findings are expected to offer theoretical bases for synthesis and applications of these novel 2D carbon nitrides and promote the following experimental exploration. (C) 2019 Elsevier Ltd. All rights reserved.
Low-temperature carrier transport in magnetic field in sandwich-like graphene/Co nanoparticles/graphene structure

Alexander K. Fedotov,Uladzislaw E. Gumiennik,Julia A. Fedotova,Janusz Przewoźnik,Czesław Kapusta

DOI: https://doi.org/10.1016/j.physe.2023.115833

2024-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:The improved analysis of carrier transport in the single-layer graphene and hybrid structures like graphene/Co nanoparticles (NPs) and graphene/Co NPs/graphene has been conducted. The temperature and magnetic field dependences of the sheet resistance R Sq (T, B) and/or conductivity σ Sq (T, В) has shown the coexistence of negative (NMR) and positive (PMR) contributions in magnetoresistive effect in all the samples under study. The dependences of R Sq (T, B) and/or σ Sq (T, В) were analyzed in the framework of some combinations of 5 models relating to quantum corrections (QCs) to Drude conductivity theory and different hopping models for variable range hopping (VRH) regimes. It was shown, in particular, that in the region of NMR effect below 75 K and in fields B < (0.5–1) T, σ Sq (T, В) dependences obey the combination of QCs theory (at induction <100 mT) and conduction by coherent hopping over localized states in the VRH regime at T < 20 K. In this case, with the phase breaking time of the wave function it follows the power-like law τφ(Т) ∼ T -p with the exponent p ≈ 1. These dependences also allowed to estimate the values of electron concentration n(T) in the structures studied, which were close to the values in the undoped graphene near the neutrality point. In the region of the PMR effect, the electrical resistance of the structures studied increases linearly with increasing B without saturation. This behavior is often attributed to the presence of structural inhomogeneities in the samples (due to e.g. Co-based nanoparticles) under study, which leads to distortion of the current paths under the action of the Lorentz force arising in a perpendicular magnetic field.

physics, condensed matter,nanoscience & nanotechnology

Carrier-Tunable Magnetism in Two Dimensional Graphene-Like C2n

Carrier-tunable Magnetism of Graphene with Single-Atom Vacancy

C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties

Tunable Half-metallic Magnetism in Atom-thin Holey Two-dimensional C$_2$N Monolayer

Widely tunable carrier mobility of boron nitride-embedded graphene.

Exotic Ferromagnetism in the Two-Dimensional Quantum Material C3N

Tuning the Electronic and Magnetic Properties of Porous Graphene-Like Carbon Nitride Through 3d Transition-Metal Doping

Mechanism of carrier doping induced magnetic phase transitions in two-dimensional materials

Structural modulation of bilayer graphene under an external electric field and carrier doping

Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures

Two-dimensional carbon nitride (2DCN) nanosheets: Tuning of novel electronic and magnetic properties by hydrogenation, atom substitution and defect engineering

Effective Carrier Doping and Quantum Capacitance Manipulation of Graphene Through Two-Dimensional Solid Electrolytes of ScI3 and YBr3

Enhanced Itinerant d0 Ferromagnetism and Tunable Topological Properties of a Ca2C/Ca2N Heterobilayer

Low-field magnetotransport in graphene cavity devices.

Theoretical Study of Carrier Mobility in Two-Dimensional Tetragonal Carbon Allotrope from Porous Graphene

Gate control of 2D magnetism in three- and four-layers CrI3/graphene heterostructures

Gate Control of 2D Magnetism in Tri- and Four-Layers CrI_3/graphene Heterostructures

Flat band carrier confinement in magic-angle twisted bilayer graphene

Gate Tunable Kondo Effect in Magnetic Molecule Decorated Graphene

Two-dimensional Graphyne-Like Carbon Nitrides: Moderate Band Gaps, High Carrier Mobility, High Flexibility and Type-Ii Band Alignment

Low-temperature carrier transport in magnetic field in sandwich-like graphene/Co nanoparticles/graphene structure