Abstract:Diamond is regarded as one of the most promising semiconductor materials used for high power devices because of its superior physical and electrical properties, such as wide bandgap, high breakdown electric field, high mobility, and high thermal conductivity. Highpower diamond devices are now receiving much attention. In particular, Schottky diode based on a metal/diamond junction has promising applications, and high breakdown voltage has been achieved, though unfortunately its forward resistance is high. In this paper, the first principles calculations are performed to study the electronic structure of interface and the Schottky barrier height of Al-diamond interface. The projection of the density of states on the atomic orbitals of the interface atoms reveals that the typical Al-induced gap states are associated with a smooth density of states in the bulk diamond band gap region, and these gap states are found to be localized within three atom layers. At the same time, electronic charge transfer makes the Fermi level upgrade on the side of diamond. Besides, the typical Al-induced gap state model gives a simple picture about what determines Schottky barrier height at Al-diamond interface, by assuming an ideal, defect-free and laterally homogeneous Schottky interface in which the only interaction comes from the decay of the electron wave function from the metal into the semiconductor, which in turn induces electronic charges to be rearranged in the region close to the interface. As for the electronic charge transfer, this potential shift can be extracted by subtracting the superimposed planar or macroscopically averaged electrostatic potentials of the Al and diamond surfaces (at frozen atomic positions), from the planar or macroscopically averaged potential of the relaxed Al-diamond interface. The electronic charge transfer suggests that the formation of an interface should be associated with the formation of new chemical bonds and substantial rearrangements of the electron charge density. Especially, we obtain the Schottky barrier height of 1.03 by the first principle, which is in good agreement with the results from phenomenological model and experiment. The research results in this paper can provide a theoretical basis for the research of the metal diamond Schottky junction diode, and can also give a theoretical reference for the research of the metal-semiconductor highpower device based on diamond material.

Diamond Schottky Barrier Diode with Fluorine- and Oxygen-Termination

Fabrication of Dual-Termination Schottky Barrier Diode by Using Oxygen-/Fluorine-terminated Diamond

X-ray photoelectron spectroscopy study of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond

Fabrication Of Diamond Based Schottky Barrier Diodes With Oxide Ramp Termination

Termination Structures for Diamond Schottky Barrier Diodes

Design and Optimization of Planar Mesa Termination for Diamond Schottky Barrier Diodes

Ramp Oxide Termination Structure Using High-K Dielectrics for High Voltage Diamond Schottky Diodes

Schottky Barrier Diode Fabricated on Oxygen-Terminated Diamond Using a Selective Growth Approach

Interface Electronic Structure and the Schottky Barrier at Al-Diamond Interface: Hybrid Density Functional Theory Hse06 Investigation

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

High Voltage Schottky Barrier Diodes In Synthetic Single Crystal Diamond

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

Characterization of Vertical Mo/Diamond Schottky Barrier Diode from Non-Ideal I-V and C-V Measurements Based on Mis Model

Highly Efficient Edge Terminations For Diamond Schottky Diodes

On-State Behaviour Of Diamond M-I-P Structures

Oxygen-terminated diamond: insights into the correlation between surface oxygen configurations and work function values

Surface potential pinning study for oxygen terminated IIa diamond

Optically Triggered Schottky Barrier Diodes in Single Crystal Diamond

Research on the Hydrogen Terminated Single Crystal Diamond MOSFET with MoO 3 Dielectric and Gold Gate Metal

Diamond Schottky Barrier Diodes with Floating Metal Rings for High Breakdown Voltage

Effect of Surface Termination on Electronic Structure of Nano-Crystalline Diamond Film