Abstract:In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

Progress in Research on Luminescence Properties of Porous Sillicon-based Composite

Research on Luminescence Properties of Porous Silicon Using a Organic Semiconductor Contact

Research of Electroluminescence Based on Porous Silicon

New Research Progress in Porous Silicon Luminescent Materials

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Luminescence and photoconductivity properties of porous polycrystalline silicon

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

The Influence of Microstructure on Optical Properties of Porous Silicon

Recent Progress on Photoluminescent Zeolite-based Composite Materials

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

Research and Application of Luminescence from Defects in Silicon

Research on Photoluminescence Properties of Porous Silicon Coated with a PMMA Polymer Film

Influence of the Surfaces Characteristics on the Luminescent Property of Porous Silicon

Recent Progress on Silicon Luminescence

Photoluminescence Properties of Porous Silicon/Porous Alumina and DBO-PPV Composites

MECHANISMS FOR PHOTOLUMINESCENCE FROM NANOSCALE SILICON/SILICON OXIDE SYSTEMS

Optical and Electrical Properties of the Composites of Porous Silicon and Organic Luminescent Materials

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Silicon-based Optoelectronic Luminescent Materials and Devices

Photoluminescence and laser-irradiation effect of siloxene compound