Large Scale and Cost Effective Generation of 3D Self-Supporting Oxide Nanowire Architectures by a Top-Down and Bottom-Up Combined Approach

Peixun Fan,Minlin Zhong,Benfeng Bai,Guofan Jin,Hongjun Zhang

DOI: https://doi.org/10.1039/c6ra06222a

IF: 4.036

2016-01-01

RSC Advances

Abstract:Large-scale and cost-effective generation of desired 3D self-supporting macro–micronano-nanowire architectures is realized by a top-down and bottom-up combined approach.

What problem does this paper attempt to address?

Multiple-Patterning Nanosphere Lithography for Fabricating Periodic Three-Dimensional Hierarchical Nanostructures.

Xiaobin Xu,Qing Yang,Natcha Wattanatorn,Chuanzhen Zhao,Naihao Chiang,Steven J. Jonas,Paul S. Weiss

DOI: https://doi.org/10.1021/acsnano.7b05472

IF: 17.1

2017-01-01

ACS Nano

Abstract:While three-dimensional (3D) configurable hierarchical nanostructures have wide ranging applications in electronics, biology, and optics, finding scalable approaches remains a challenge. We report a robust and general strategy called multiple-patterning nanosphere lithography (MP-NSL) for the fabrication of periodic 3D hierarchical nanostructures in a highly scalable and tunable manner. This nanofabrication technique exploits the selected and repeated etching of polymer nanospheres that serve as resists and that can be shaped in parallel for each processing step. The application of MP-NSL enables the fabrication of periodic, vertically aligned Si nanotubes at the wafer scale with nanometer-scale control in three dimensions including outer/inner diameters, heights/hole-depths, and pitches. The MP-NSL method was utilized to construct 3D periodic hierarchical hybrid nanostructures such as multilevel solid/hollow nanotowers where the height and diameter of each level of each structure can be configured precisely as well as 3D concentric plasmonic nanodisk/nanorings with tunable optical properties on a variety of substrates.
Top-down fabrication of sub-30 nm monocrystalline silicon nanowires using conventional microfabrication

Songyue Chen,Johan G Bomer,Wilfred G van der Wiel,Edwin T Carlen,Albert van den Berg

DOI: https://doi.org/10.1021/nn901220g

IF: 17.1

2009-11-24

ACS Nano

Abstract:We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to approximately 100 microm can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.
Three Dimensional Sculpturing of Vertical Nanowire Arrays by Conventional Photolithography

Run Shi,Chengzi Huang,Linfei Zhang,Abbas Amini,Kai Liu,Yuan Shi,Shuhan Bao,Ning Wang,Chun Cheng

DOI: https://doi.org/10.1038/srep18886

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Ordered nanoarchitectures have attracted an intense research interest recently because of their promising device applications. They are always fabricated by self-assembling building blocks such as nanowires, nanodots. This kind of bottom up approaches is limited in poor control over height, lateral resolution, aspect ratio and patterning. Here, we break these limits and realize 3D sculpturing of vertical ZnO nanowire arrays (NAs) based on the conventional photolithography approach. These are achieved by immersing nanowire NAs in thick photoresist (PR) layers, which enable the cutting and patterning of ZnO NAs as well as the tailoring of NAs. Our strategy of 3D sculpturing of NAs promisingly paves the way for designing novel NAs-based nanoarchitectures.
A General Approach For Fabricating Arc-Shaped Composite Nanowire Arrays By Pulsed Laser Deposition

Yue Shen,Jung-Il Hong,Sheng Xu,Shisheng Lin,Hao Fang,Su Zhang,Yong Ding,Robert L. Snyder,Zhong Lin Wang

DOI: https://doi.org/10.1002/adfm.200901546

IF: 19

2010-01-01

Advanced Functional Materials

Abstract:Here, a new method is demonstrated that uses sideways pulsed laser deposition to deliberately nanowires into a desired shape after growth and fabricate are shaped composite nanowire arrays of a wide range of nanomaterials. The starting nanowires can be ZnO, but the materials to be deposited can be metallic semiconductor, or ceramic depending on the application. This method provides a general approach for rational fabrication of a wide range of side be sire or "core-shell" nanowire arrays with controllable degree of bending and internal strain. Considering the ZnO is a piezoelectric and semiconductive materials, its electric properties change when deformed. Thus technique has potential applications in tunable electronics, optoelectronics, and piezotronics.
Synthesis of orthogonally assembled 3D cross-stacked metal oxide semiconducting nanowires

Yuan Ren,Yidong Zou,Yang Liu,Xinran Zhou,Junhao Ma,Dongyuan Zhao,Guangfeng Wei,Yuejie Ai,Shibo Xi,Yonghui Deng

DOI: https://doi.org/10.1038/s41563-019-0542-x

IF: 41.2

2019-12-02

Nature Materials

Abstract:Assemblies of metal oxide nanowires in 3D stacks can enable the realization of nanodevices with tailored conductivity, porous structure and a high surface area. Current fabrication methods require complicated multistep procedures that involve the initial preparation of nanowires followed by manual assembly or transfer printing, and thus lack synthesis flexibility and controllability. Here we report a general synthetic orthogonal assembly approach to controllably construct 3D multilayer-crossed metal oxide nanowire arrays. Taking tungsten oxide semiconducting nanowires as an example, we show the spontaneous orthogonal packing of composite nanorods of poly(ethylene oxide)-block-polystyrene and silicotungstic acid; the following calcination gives rise to 3D cross-stacked nanowire arrays of Si-doped metastable ε-phase WO<sub>3</sub>. This nanowire stack framework was also tested as a gas detector for the selective sensing of acetone. By using other polyoxometallates, this fabrication method for woodpile-like 3D nanostructures can also be generalized to different doped metal oxide nanowires, which provides a way to manipulate their physical properties for various applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Formation of Magnetic Nanowire Arrays by Cooperative Lateral Growth.

Fei Chen,Zihao Yang,Jing-Ning Li,Fei Jia,Fan Wang,Di Zhao,Ru-Wen Peng,Mu Wang

DOI: https://doi.org/10.1126/sciadv.abk0180

IF: 13.6

2022-01-01

Science Advances

Abstract:Nanowires typically grow along their longitudinal axis, and the long-range order among wires sustains only when a template exists. Here, we report an unprecedented electrochemical growth of ordered metallic nanowire arrays from an ultrathin electrolyte layer, which is achieved by solidifying the electrolyte solution below the freezing temperature. The thickness of the electrodeposit is instantaneously tunable by the applied electric pulses, leading to parallel ridges on webbed film without using any template. An array of metallic nanowires with desired separation and width determined by the applied pulses is formed on the substrate with arbitrary surface patterns by etching away the webbed film thereafter. This work demonstrates a previously unrecognized fabrication strategy that bridges the gap of top-down lithography and bottom-up self-organization in making ordered metallic nanowire arrays over a large area with low cost.
3-D matrix nano-wire transistor fabrication on silicon substrate

mansun chan,ricky m y ng,tao wang,xuan zuo,jin he

DOI: https://doi.org/10.1109/ICSICT.2010.5667461

2010-01-01

Abstract:A simple top down method to fabricate an array of vertically stacked nanowires is presented. By taking advantage of the non-uniformity of the Inductive Coupled Plasma (ICP) etching process to form a scalloped sidewall followed by a subsequent stress limited oxidation step, a narrow silicon fin can be vertically patterned to form stacked nanowires with different cross-sectional shapes. The stacked nanowires have been used to fabricated Gate-All-Around (GAA) MOSFETs that show excellent characteristics.
The fabrication of large-scale sub-10-nm core-shell silicon nanowire arrays

Shiming Su,Linhan Lin,Zhengcao Li,Jiayou Feng,Zhengjun Zhang

DOI: https://doi.org/10.1186/1556-276X-8-405

2013-01-01

Nanoscale Research Letters

Abstract:A combination of template-assisted metal catalytic etching and self-limiting oxidation has been successfully implemented to yield core-shell silicon nanowire arrays with inner diameter down to sub-10 nm. The diameter of the polystyrene spheres after reactive ion etching and the thickness of the deposited Ag film are both crucial for the removal of the polystyrene spheres. The mean diameter of the reactive ion-etched spheres, the holes on the Ag film, and the nanowires after metal catalytic etching exhibit an increasing trend during the synthesis process. Two-step dry oxidation and post-chemical etching were employed to reduce the diameter of the silicon nanowires to approximately 50 nm. A self-limiting effect was induced by further oxidation at lower temperatures (750°C ~ 850°C), and core-shell silicon nanowire arrays with controllable diameter were obtained.
In Situ Fabrication of Inorganic Nanowire Arrays Grown from and Aligned on Metal Substrates

Weixin Zhang,Shihe Yang

DOI: https://doi.org/10.1021/ar900105c

IF: 24.466

2009-01-01

Accounts of Chemical Research

Abstract:The full potential of nanotechnology can be unleashed only when one is able not only to synthesize a rich variety of nanoscale building blocks but also assemble them into various patterns at the supramolecular and supracluster levels. In particular, the application of nanoparticle and nanowire materials often requires their assembly in the form of thin films, preferably on conductive surfaces for electrical addressing, control, and detection. Although a dazzling array of nanostructures has been fabricated by bottom-up approaches, one of the contemporary challenges is to assemble these nanostructures so that they introduce and realize functionalities. An alluring avenue is to simultaneously accomplish both the nanostructure synthesis and assembly on a useful substrate in a parallel fashion, affording the advantages of simplicity, low cost, and high throughput. In this Account, we review our recent work on growing inorganic nanowires (for example, metal sulfides, metal oxides, and so forth) directly from and on metal substrates in arrays without using templates and catalysts. This method of engineering nanowire arrays on metal substrates integrates the nanowire synthesis and assembly into a parallel process, both in time and in space, by exploiting in situ chemistry on the metal substrates. Both gas-phase and solution-phase approaches have been developed to synthesize the aligned nanowires; here, full advantage is taken of interfacial kinetics of restricted diffusion and surface-specific reactions, often accompanied by new interfacial growth mechanisms. The setting of nanowire arrays on metal substrates has allowed exploration of their application potentials in areas such as field electron emission and chemical sensing. The approaches described here are general, and we predict that they will be extended to more inorganic materials, such as metal halides. Moreover, as more control is achieved with synthetic methods, inorganic nanowire arrays should provide unusual magnetic, optical, and electronic properties for nanostructural engineers willing to confront the attendant challenges. Accordingly, applications for which there is a current impetus for progress, such as solar cells or lithium ion secondary batteries, might well be addressed with this methodology.
Study of Fabricating Functional Nanostructure Through Combined with Molecular Assembly

N Gu,L Huang,LN Xu,JH Liao,Y Zhang,M Wang,KC Zhou,J Wang,CW Ge,W Yu,HY Shen,L Peng

DOI: https://doi.org/10.1109/nano.2003.1231036

2003-01-01

Abstract:In any way, it is difficult to fabricate a functional nanostructure, especially for the research and development of devices. Arranging atoms, molecules to establish a device structure, named the way of bottom-up, represents a direction along which might be with the advantages of low-cost, easy to control and flexible for forming the structure. At present molecular assembly has been found the very important role in the way of bottom-up. The combination of molecular assembly and other fabrication techniques, e.g., lithography, is the first stage of the bottom-up to fabricate the functional structures of devices. Herein we present our efforts to make the electrodes with the feature of nanogap, the preliminary results of the arrangement of nanoparticles within the gap of the electrodes and the assembly of biomolecules on the surface of the electrode.
Macroscopic Free‐Standing Hierarchical 3D Architectures Assembled from Silver Nanowires by Ice Templating

Huai-Ling Gao,Liang Xu,Fei Long,Zhao Pan,Yu-Xiang Du,Yang Lu,Jin Ge,Shu-Hong Yu

DOI: https://doi.org/10.1002/anie.201400457

2014-01-01

Angewandte Chemie

Abstract:As macroscopic three dimensional (3D) architectures show increasing significance, much effort has been devoted to the hierarchical organization of 1D nanomaterials into serviceable macroscopic 3D assemblies. How to assemble 1D nanoscale building blocks into 3D hierarchical architectures is still a challenge. Herein we report a general strategy based on the use of ice as a template for assembling 1D nanostructures with high efficiency and good controllability. Free-standing macroscopic 3D Ag nanowire (AgNW) assemblies with hierarchical binary-network architectures are then fabricated from a 1D AgNW suspension for the first time. The microstructure of this 3D AgNW network endows it with electrical conductivity and allows it to be made into stretchable and foldable conductors with high electromechanical stability. These properties should make this kind of macroscopic 3D AgNW architecture and it composites suitable for electronic applications.
Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves

Ruijin Hu,Shun Xu,Junzhuan Wang,Yi Shi,Jun Xu,Kunji Chen,Linwei Yu

DOI: https://doi.org/10.1021/acs.nanolett.0c02950

IF: 10.8

2020-01-01

Nano Letters

Abstract:Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the construction of versatile 3D nanocomplexes, while the major challenge is to achieve a precise location and uniformity control, as guaranteed by top-down lithography. Here, an unprecedented uniform and reliable growth integration of 10-layer stacked Si nanowires (SiNWs) has been accomplished, for the very first time, via a new groove-confined and tailored catalyst formation and guided growth upon the truncated sidewall of SiO2/SiNx multilayers. The SiNW array accomplishes a narrow diameter of Dnw = 28 ± 2.4 nm, NW-to-NW spacing of tsp = 40 nm, and extremely stable growth over Lnw > 50 μm and bending locations, which can compete with or even outperform the state-of-the-art top-down lithography and etching approaches, in terms of stacking number, channel uniformity at different levels, fabrication cost, and efficiency. These results provide a solid basis to establish a new 3D integration approach to batch-manufacture various advanced electronic and sensor applications.
Nanostructures AGeneral Route to Macroscopic Hierarchical 3 D Nanowire Networks

Hongmei Luo,Rong Kou,Maria P. Gil,Shuaigang Xiao,Vladimir O. Golub,Zhenzhong Yang,C. Jeffrey Brinker,Yunfeng Lu

2004-01-01

Abstract:[*] D. Wang, H. Luo, R. Kou, M. P. Gil, Prof. Y. Lu Department of Chemical and Biomolecular Engineering Tulane University New Orleans, LA 70118 (USA) Fax: (+1)504-865-6744 E-mail: ylu@tulane.edu S. Xiao Department of Chemical and Biological Engineering University of Wisconsin Madison, Wisconsin 53706 (USA) Dr. V. O. Golub Advanced Materials Research Institute University of New Orleans New Orleans, LA 70118 (USA) Prof. Z. Yang State Key Laboratory of Polymer Physics and Chemistry Joint Laboratory of Polymer Science and Materials Institute of Chemistry Chinese Academy of Science Beijing, 100080 (P. R. China) Fax: (+86)10-6255-9373 E-mail: yangzz@iccas.ac.cn Prof. C. J. Brinker Sandia National Laboratories and The University of New Mexico 1001 University Blvd. SE Albuquerque, NM 87106 (USA) [**] The work was partially funded by NASA (Grants NAG-1-02070 and NCC-3-946), the Office of Naval Research, Louisiana Board of Regents (Grant LEQSF(2001-04)-RD-B-09), the National Science Foundation (Grant NSF-DMR-0124765 and CAREER Award), and the National Science Foundation of China (Grants 50325313 and 20128004). We thank Dr. Jibao He for help with TEM imaging measurements. Supporting information for this article is available on the WWW under http://www.angewandte.org or from the author. Angewandte Chemie
Emergent Motifs of Macroscopic Nanowire Assemblies

Jian-Wei Liu,Shu-Hong Yu

DOI: https://doi.org/10.1093/nsr/nwv013

IF: 20.6

2015-01-01

National Science Review

Abstract:In the past two decades, the field of nanowire assemblies has flourished, with activity focusedonboth fundamental and applied research. Nanowire assemblies of a diverse range of compositions with tailored physical properties have been constructed using nanowires as building blocks. Many physical properties are significantly altered when the nanowire diameter is close to or below certain length scales, such as the exciton Bohr radius, the wavelength of light, the phonon mean free path, the critical size of magnetic domains, or the exciton diffusion length. However, individual nanowirebased nanodevices and their disordered structuresmaybe impractical formeeting the growing demands of microelectronic and photonic device fabrication, because of the poor reproducibility and complex fabrication processes. Macroscopic-scale integration of nanowires into ordered or controlled assembled structures provides insights into the phenomena of aggregation and anewway to tailor theproperties of nanowires [1]. Despite the impressive possibility of manipulating individual nanowires, engineering of nanowires by surfactantassisted assembly appears to be impractical to meet the growing demand for energy conversion coatings and new high-performance structural materials [2]. Assembly strategies have been employed to prepare nanowire thin films on the wafer scale to demonstrate novel collective properties and practical device fabrication (Fig. 1). Two wellknown and contrasting design strategies for nanowire assembly are employed: top-down and bottom-up. Top-down approaches seek to create nanowire-based devices using larger, externally controlled methods to direct their assembly, such as lithography, thin-film deposition, and etching, while in the bottom-up approach individual nanowires are built up into more complex nanowire assemblies via self-assembly methods. Compared with top-down strategies, bottom-up approaches have lower processing costs and higher production efficiency, offering more flexibility in selecting nanoscale building blocks and fabrication processes. Current progress on nanowire assembly methods offers considerable opportunities by introducing tiny but long-lasting forces ranging from molecular interactions, shear forces, and external field forces to electrostatic interactions [3]. Molecular interaction-driven assembly of nanowires usually employs interfaces as the assembly platform; these include methods such as the Langmuir Blodgett strategy involving water–air interfaces and the evaporation approach, using liquid–air or more complex interfaces, such as oil–water–air interfaces [4,5]. Shear forces, which are unaligned forces pushing two parts of the body
Construction of 3D Metallic Nanostructures on an Arbitrarily Shaped Substrate.

Fei Chen,Jingning Li,Fangfang Yu,Di Zhao,Fan Wang,Yanbin Chen,Ru-Wen Peng,Mu Wang

DOI: https://doi.org/10.1002/adma.201602049

IF: 29.4

2016-01-01

Advanced Materials

Abstract:Constructing conductive/magnetic nanowire arrays with 3D features by electrodeposition remains challenging. An unprecedented fabrication approach that allows to construct metallic (cobalt) nanowires on an arbitrarily shaped surface is reported. The spatial separation of nanowires varies from 70 to 3000 nm and the line width changes from 50 to 250 nm depending on growth conditions.
Wafer-Scale Assembly of Semiconductor Nanowire Arrays by Contact Printing

Zhiyong Fan,Johnny C. Ho,Zachery A. Jacobson,Roie Yerushalmi,Robert L. Alley,Haleh Razavi,Ali Javey

DOI: https://doi.org/10.1021/nl071626r

2007-12-30

Abstract:Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability has been one of the significant bottleneck challenges facing the potential integration of nanowires for both nano and macro electronic circuit applications. Many efforts have focused on tackling this challenge, and while significant progress has been made, still most presented approaches lack either the desired controllability in the positioning of nanowires or the needed uniformity over large scales. Here, we demonstrate wafer-scale assembly of highly ordered, dense, and regular arrays of NWs with high uniformity and reproducibility through a simple contact printing process. We demonstrate contact printing as a versatile strategy for direct transfer and controlled positioning of various NW materials into complex structural configurations on substrates. The assembled NW pitch is shown to be readily modulated through the surface chemical treatment of the receiver substrate, with the highest density approaching ~8 NW/um, ~95% directional alignment and wafer-scale uniformity. Furthermore, we demonstrate that our printing approach enables large-scale integration of NW arrays for various device structures on both Si and plastic substrates, with a controlled semiconductor channel width, and therefore ON current, ranging from a single NW (~10 nm) and up to ~250 um, consisting of a parallel array of over 1,250 NWs.

Materials Science
Nanoscale Assembly of Nanowires Templated by Microtubules

Zhou Jing C.,Luo Tzy-Jiun Mark,Gao Yan,Xue Mei,Lau Joseph,Hamasaki Toshikazu,Hu Evelyn,Wang Kang,Dunn Bruce

DOI: https://doi.org/10.1557/proc-0901-ra16-41-rb16-41

2005-01-01

Abstract:Conventional top-down lithographic processes approach their practical and theoretical limits at dimensional scales less than 100 nm. Alternative bottom-up methods are being investigated to build nanoscale architectures, including the use of biomolecules whose functional groups bind inorganic particles. In this study, the fabrication and alignment of microtubule-based nanowires are investigated. Microtubules (MT) are fibrous proteins found in nearly all eukaryotes. Our work was carried out using polymerized alpha- and beta-tubulins, which were cross-linked with glutaraldehyde to stabilize the protein structure. Ni coated microtubules were fabricated by reducing Ni2+ to Ni0 on Pd activated microtubule surface. Focus Ion Beam was used to write metal contacts on these Ni microtubule nanowires and DC conductivity values were measured. Au deposition on MT was performed by both electroless deposition and electrodeposition, by reducing HAuCl4 onto MT prebound with 2 nm Au colloids. Although most MTs exhibited discontinuous Au binding, a fraction of MTs were covered completely by Au. Preliminary electrical measurements for these materials are reported. Alignment of microtubules was also achieved by injecting MTs into microfluidic devices over amine-coated substrate surfaces. These biotemplating approaches are the first steps towards constructing more complicated 2D and 3D architectures.
Blending of nanoscale and microscale in uniform large-area sculptured thin-film architectures

Mark W. Horn,Matthew D. Pickett,Russell Messier,Akhlesh Lakhtakia

DOI: https://doi.org/10.1088/0957-4484/15/3/013

2003-09-19

Abstract:The combination of large thickness ($>3$ $\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the first time. The nanoscale and the microscale have thus been blended together in sculptured thin films with transverse architectures. SiO$_x$ ($x\approx 2$) nanowires were grown by electron--beam evaporation onto silicon substrates both with and without photoresist lines (1--D arrays) and checkerboard (2--D arrays) patterns. Atomic self--shadowing due to oblique--angle deposition enables the nanowires to grow continuously, to change direction abruptly, and to maintain constant cross--sectional diameter. The selective growth of nanowire assemblies on the top surfaces of both 1--D and 2--D arrays can be understood and predicted using simple geometrical shadowing equations.

Optics,Materials Science
A facile nanowire fabrication approach based on edge lithography

Yaoping Liu,Wei Wang,Haixia Alice Zhang,Wengang Wu,Zhihong Li

DOI: https://doi.org/10.1109/NEMS.2012.6196720

2012-01-01

Abstract:This paper developed a facile nanofabrication approach at a 4-inch wafer level based on edge lithography defined hundreds nanometer-sized features. Aluminum nanowires with width around 600 nm were prepared and the wafer-level width non-uniformity was less than 8.45%. The aluminum nanowires functioned as masks in the deep reaction ion etching for vertically-stacked silicon nanowires and silicon nanoridge preparation. The obtained nanoridges acted as the nano-master in the molding of a PDMS micro/nano integrated channels. The proposed approach has the potential of nanofabricating with mass-production at effective cost, thereby holds promising future in MEMS (Microelectromechanical system) compatible micro/nano integration and nanobiotechnology applications.
Large-area zinc oxide nanorod arrays templated by nanoimprint lithography: control of morphologies and optical properties

Chen Zhang,Xiaohu Huang,Hongfei Liu,Soo Jin Chua,Caroline A Ross

DOI: https://doi.org/10.1088/0957-4484/27/48/485604

IF: 3.5

2016-12-02

Nanotechnology

Abstract:Vertically aligned, highly ordered, large area arrays of nanostructures are important building blocks for multifunctional devices. Here, ZnO nanorod arrays are selectively synthesized on Si substrates by a solution method within patterns created by nanoimprint lithography. The growth modes of two dimensional nucleation-driven wedding cakes and screw dislocation-driven spirals are inferred to determine the top end morphologies of the nanorods. Sub-bandgap photoluminescence of the nanorods is greatly enhanced by the manipulation of the hydrogen donors via a post-growth thermal treatment. Lasing behavior is facilitated in the nanorods with faceted top ends formed from wedding cakes growth mode. This work demonstrates the control of morphologies of oxide nanostructures in a large scale and the optimization of the optical performance.

Large Scale and Cost Effective Generation of 3D Self-Supporting Oxide Nanowire Architectures by a Top-Down and Bottom-Up Combined Approach

Multiple-Patterning Nanosphere Lithography for Fabricating Periodic Three-Dimensional Hierarchical Nanostructures.

Top-down fabrication of sub-30 nm monocrystalline silicon nanowires using conventional microfabrication

Three Dimensional Sculpturing of Vertical Nanowire Arrays by Conventional Photolithography

A General Approach For Fabricating Arc-Shaped Composite Nanowire Arrays By Pulsed Laser Deposition

Synthesis of orthogonally assembled 3D cross-stacked metal oxide semiconducting nanowires

Formation of Magnetic Nanowire Arrays by Cooperative Lateral Growth.

3-D matrix nano-wire transistor fabrication on silicon substrate

The fabrication of large-scale sub-10-nm core-shell silicon nanowire arrays

In Situ Fabrication of Inorganic Nanowire Arrays Grown from and Aligned on Metal Substrates

Study of Fabricating Functional Nanostructure Through Combined with Molecular Assembly

Macroscopic Free‐Standing Hierarchical 3D Architectures Assembled from Silver Nanowires by Ice Templating

Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves

Nanostructures AGeneral Route to Macroscopic Hierarchical 3 D Nanowire Networks

Emergent Motifs of Macroscopic Nanowire Assemblies

Construction of 3D Metallic Nanostructures on an Arbitrarily Shaped Substrate.

Wafer-Scale Assembly of Semiconductor Nanowire Arrays by Contact Printing

Nanoscale Assembly of Nanowires Templated by Microtubules

Blending of nanoscale and microscale in uniform large-area sculptured thin-film architectures

A facile nanowire fabrication approach based on edge lithography

Large-area zinc oxide nanorod arrays templated by nanoimprint lithography: control of morphologies and optical properties