Phase Equilibria at Si-Hfo2 and Pt-Hfo2 Interfaces from First Principles Thermodynamics

H. Zhu,C. Tang,R. Ramprasad
DOI: https://doi.org/10.1103/physrevb.82.235413
IF: 3.7
2010-01-01
Physical Review B
Abstract:The phase diagrams of Si-HfO2 and Pt-HfO2 interfaces as a function of temperature and oxygen pressure have been determined using first principles thermodynamics (FPTs), i.e., by combining conventional density-functional theory results with thermodynamics. The vibrational and configurational entropic contributions to the free energies of the condensed phases are explicitly included in this treatment. We demonstrate that the predictions of the FPT approach are in quantitative agreement with experiments for the classes of interfaces considered here. In particular, under ultrahigh vacuum (UHV) conditions, we show that FPT methods predict the correct Si-HfO2 silicalike interface configurations. Likewise, we also show that an interfacial oxygen coverage of 0.5-1.0 monolayer is favored under UHV conditions at the Pt-HfO2 interface before rapid oxidation of Pt may be expected (for higher oxygen pressures). These results have important implications both for the applicability of FPT methods for the considered classes of interfaces as well as for "high-K" dielectrics-based electronic devices in which such interfaces are expected.
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