Excitonic properties and near‐infrared coherent random lasing in vertically aligned CdSe nanowires
Rui Chen, Muhammad Iqbal Bakti Utama, Zeping Peng, Bo Peng, Qihua Xiong, Handong Sun
2011-03-18
Abstract:One-dimensional (1D) semiconductor nanowires (NWs) have drawn considerable research attention over the past few decades because of their unique properties and potential applications in nanoelectronics, photonics, luminescent materials, lasing materials, and biological and medical sensing.[1–3] Impressive progress has been demonstrated in highly efficient light sources (nanolasers), waveguides, field-effect transistors and photodetectors based on group IV elements (Si and Ge),[4] III–V compound semiconductors (GaN and GaAs),[2, 5] and semiconducting oxides (ZnO, SnO 2 and In 2O 3).[6, 7] Owing to its direct bandgap (ca. 1.74 eV at room temperature), good absorption ability, and excellent photosensitivity,[8, 9] CdSe is recognized as a promising light-harvesting material to be applied in optoelectronics. Especially, the fundamental emission of CdSe falls in the near-infrared (NIR) region, and biosensors operating in this region can avoid interference from biological media such as tissue autofluorescence and scattering light, and thereby facilitate relatively interference-free sensing.[10] At present, studies on CdSe-based materials are extensively focused on colloidal CdSe quantum dots (QDs).[11] Varying the size of the nanocrystals allows the bandgap of CdSe QDs to be tuned to cover the whole visible region up to the NIR region. However, colloidal QDs form clusters easily, and some special ligands need to be added for dispersion. Thus, colloidal QDs may not be very stable under ultraviolet (UV) radiation.[12] In comparison, CdSe NWs can circumvent this drawback, because very high crystalline quality can be readily achieved …