Abstract:Chemical vapor deposition (CVD) is an essential method of depositing and fabricating large-area and high-quality graphene. In this work, molecular dynamics (MD) simulation technology is adopted to simulate the fabrication of graphene on the copper (111) crystal surface by chemical vapor deposition method. In order to eliminate the adverse effects of traditional MD method, an adapted potential system between carbon and copper atoms is introduced into the modeling of deposition and growth simulation of graphene. The results reveal the microscale growth mechanism of the graphene depositing on Cu(111) crystal surfaces, and the influence of temperature and carbon deposition rate (CDR) on the quality of graphene. The simulation results indicate that the deposition and growth of graphene consists of two stages. The first stage is to form binary carbons, trinary carbons and carbon chains. The second stage is to form carbon rings and the defects healing. The research results also reveal that high temperature can provide the carbon atoms with sufficient energy, which can help the carbon atoms to skip the energetic barrier between the two stages, and then achieve the deposition and growth of graphene. Moreover, the influence of temperature and carbon deposition rate are investigated in detail. The temperature mainly affects the defects and the flatness of graphene. The defects of graphene are the least and the surface can become the flattest at a deposition temperature of 1300 K. Higher temperature can cause the carbon atoms to irregularly move, and lower temperature can suppress the catalysis of the copper substrate. Both the higher and lower temperature can degrade the quality of the graphene surface. The CDR can influence the defects of graphene in growth. The lower value of CDR can lead to local growth on the graphene surface because of the lower nucleation density while the higher CDR is also able to cause the defects to form because of the uneven free energy distribution on the copper surface that has thermal fluctuation. It is shown that graphene can present the flattest surface when the value of CDR is set to be 5 ps–1. According to the simulation process of deposition, it validates that the bi-layer and multi-layer graphene may grow based on the deposition of original single layer of graphene. As to the deposition and growth practice, it is suggested that the temperature 1300K should be suitable for the graphene CVD process of Cu(111) surface. The results in this work can provide a reference for understanding and implementing the fabrication of graphene on the Cu substrate by CVD methods.

Direct Identification of Multilayer Graphene Stacks on Copper by Optical Microscopy

Rapid Identification of the Layer Number of Large-Area Graphene on Copper

Non-destructive and Rapid Evaluation of Chemical Vapor Deposition Graphene by Dark Field Optical Microscopy

Non-destructive and Rapid Evaluation of CVD Graphene by Dark Field Optical Microscopy

Direct Optical Characterization of Graphene Growth and Domains on Growth Substrates

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

A facile method to observe graphene growth on copper foil

Identification of Copper Surface Index by Optical Contrast

Identifying the Stacking Order of Multilayer Graphene Grown by Chemical Vapor Deposition Via Raman Spectroscopy

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Investigation of Multilayer Domains in Large-Scale Cvd Monolayer Graphene by Optical Imaging

Synthesis of Multilayer Graphene Films on Copper by Modified Chemical Vapor Deposition

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering

Stacking Relations and Substrate Interaction of Graphene on Copper Foil

Direct observation of graphene growth and associated copper substrate dynamics by in situ scanning electron microscopy.

Deposition and Growth Mechanism of Graphene on Copper Crystal Surface Based on Molecular Dynamics Simulation

Density Functional Theory and Molecular Dynamics Study on the Growth of Graphene by Chemical Vapor Deposition on Copper Substrate

Controllable Synthesis and Growth Mechanism of Interlayer-Coupled Multilayer Graphene

Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Towards Wafer-Size Strictly Monolayer Graphene on Copper Via Cyclic Atmospheric Chemical Vapor Deposition