A Universal Method to Grow and Etch Graphene Film

Ningqin Deng,He Tian,Haiming Zhao,Cheng Li,Luqi Tao,Xuefeng Wang,Mohammad Ali Mohammad,Wentian Mi,Yi Yang,Tianling Ren
DOI: https://doi.org/10.1109/memsys.2016.7421653
2016-01-01
Abstract:This paper reports a novel universal method to grow and etch graphene film using a one-step laser-scribing process. The grown and etched regions were observed when a graphene oxide (GO) film was exposed to different laser power. The resulting profiles, Raman spectra, optical and electrical properties were thoroughly analyzed. This work indicates that the laser-scribing technique is promising for the rapid and cost efficient large-scale production of graphene for various applications, such as NEMS resonator. NEMS pressure sensor. NEMS gas sensor. etc.
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