Abstract:In most cases, layered transition metal dichalcogenides (LTMDs), containing metallic phases, show electrochemical behavior different from their semiconductor counterparts. Typically, two-dimensional layered metallic 1T-MoS2 demonstrates better electrocatalytic performance for water splitting compared to its 2H counterpart. However, the characteristics of low metallic phase concentration and poor stability limit its applications in some cases. Herein, we demonstrate a simple and efficient bottom-up wet-chemistry strategy for the large-scale synthesis of nanoscopic ultrathin Mo1–xWxS2 nanosheets with enlarged interlayer spacing and high metallic phase concentration. Our characterizations, including X-ray absorption fine structure spectroscopy (XAFS), high-angle annular dark-fieldscanning transmission electron microscopy (HAADF-STEM), and X-ray photoelectron spectroscopy (XPS) revealed that the metallic ultrathin ternary Mo1–xWxS2 nanosheets exhibited distorted metal–metal bonds and a tunable metallic phase concentration. As a proof of concept, this optimized catalyst, with the highest metallic phase concentration (greater than 90%), achieved a low overpotential of about–155 mV at a current density of –10 mA/cm2, a small Tafel slope of 67 mV/dec, and an increased turnover frequency (TOF) of 1.3 H2 per second at an overpotential of –300 mV (vs. reversible hydrogen electrode (RHE)), highlighting the importance of the metallic phase. More importantly, this study can lead to a facile solvothermal route to prepare stable and high-metallicphase-concentration transition-metal-based two-dimensional materials for future applications.

One-Step Synthesis of MoS₂/WS₂ Layered Heterostructures and Catalytic Activity of Defective Transition Metal Dichalcogenide Films.

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Metallo‐Hydrogel‐Assisted Synthesis and Direct Writing of Transition Metal Dichalcogenides

High-metallic-phase-concentration Mo1–xWxS2 nanosheets with expanded interlayers as efficient electrocatalysts

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Facilitating Uniform Large-Scale MoS2, WS2 Monolayers, and Their Heterostructures Through Van Der Waals Epitaxy

Morphological Engineering of Cvd-Grown Transition Metal Dichalcogenides for Effi Cient Electrochemical Hydrogen Evolution

Evolution of Two-Dimensional Mo1–xWxS2 Alloy-Based Vertical Heterostructures with Various Composition Ranges Via Manipulating the Mo/W Precursors

Facile Synthesis of Two-Dimensional MoS 2 /WS 2 Lateral Heterostructures with Controllable Core/shell Size Ratio by a One-Step Chemical Vapor Deposition Method

Facile synthesis of two-dimensional MoS2/WS2 lateral heterostructures with controllable core/shell size ratio by a one-step chemical vapor deposition method

Large‐Area Growth of MoS2/WS2 Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

Engineering the Edges of MoS2 (WS2) Crystals for Direct Exfoliation into Monolayers in Polar Micromolecular Solvents

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Phase-Controlled 1T Transition-Metal Dichalcogenide-Based Multidimensional Hybrid Nanostructures

Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides

Synthesis of Large-Area Uniform MoS2 Films by Substrate-Moving Atmospheric Pressure Chemical Vapor Deposition: from Monolayer to Multilayer

Interlayer Interactions In 2d Ws2/Mos2 Heterostructures Monolithically Grown By In Situ Physical Vapor Deposition

Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization