Thickness Dependence of Voltage-Driven Magnetization Switching in Feco/Pi/Piezoelectric Actuator Heterostructures

B. S. Cui,X. B. Guo,K. Wu,D. Li,Y. L. Zuo,L. Xi

DOI: https://doi.org/10.1088/0022-3727/49/8/085002

2016-01-01

Abstract:Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe65Co35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young's module (similar to 4 GPa for PI as compared to similar to 180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90 degrees transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90 degrees rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90 degrees magnetization switching with low-power consumption was achieved in this work.