A 17–26.5 GHz 42.5 Dbm Broadband and Highly Efficient Gallium Nitride Power Amplifier Design
Li Ming,Li Zhiqun,Zheng Quan,Lin Lanfeng,Tao Hongqi
DOI: https://doi.org/10.1631/fitee.2000513
2022-01-01
Abstract:A gallium nitride (GaN) power amplifier monolithic microwave integrated circuit (MMIC) with a wide band and high efficiency in the microwave frequency band is proposed in this study. The power amplifier MMIC uses a 0.15 nn GaN high electron mobility transistor (HEMT) process. The operating frequency band of the amplifier can cover the whole K-band, i.e., 17-26.5 GHz. To obtain better output power and power added efficiency (PAE), the power amplifier MMIC is designed with the optimal driving ratio of the front and rear stages and the optimal size of the transistor according to the performance of the transistor, and a broadband low-loss circuit topology is adopted to realize the broadband high-efficiency design. The harmonic control structure is integrated into the drive-stage matching circuit to improve the high-frequency efficiency and keep the PAE high performance in the whole frequency band. In the continuous wave (CW) mode, results show that the power amplifier, using a three-stage topology, demonstrates over 42.5 dBm saturated output power in the frequency range of 17-26.5 GHz, an average PAE of 30%, and the maximum value of PAE is 32.1% at 19.8 GHz. The output power flatness is better than 1.0 dB. The chip has a compact structure and an area of 4.2 mmx3.0 mm, and can be widely used in transceiver components, wireless communications, electronic measuring instruments, etc.