Abstract:Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead routing that can increase power dissipation and the likelihood of voltage breakdown. Here, we propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps. The traps are vertically separated, and create a trapping potential between their respective planes. The orthogonal orientation of the RF electrodes of each trap relative to the other provides perpendicular axes of confinement that can be used to realize transport in two dimensions. While this design introduces manufacturing and operating challenges, as now two separate structures have to be precisely positioned relative to each other in the vertical direction and optical access from the top is obscured, it obviates the need to route RF leads below the top surface of the trap and eliminates the pseudopotential bumps that occur in typical junctions. In this paper the stability of idealized ion transfer in the new configuration is demonstrated, both by solving the Mathieu equation analytically to identify the stable regions and by numerically modeling ion dynamics. Our novel junction layout enhances the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.

Versatile Surface Ion Trap for Effective Cooling and Large-Scale Trapping of Ions

Versatile Surface Ion Trap with Fork Junction for Effective Cooling

Optimized surface ion trap design for tight confinement and separation of ion chains

Multi-junction surface ion trap for quantum computing

A Configurable Surface-Electrode Ion Trap Design for Quantum Information Processing

Optimization of Parameters of a Surface-Electrode Ion Trap and Experimental Study of Influences of Surface on Ion Lifetime

A site-resolved two-dimensional quantum simulator with hundreds of trapped ions

Fabrication and Characterization of Surface Electrode Ion Trap for Quantum Computing

TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

Monolithic Microfabricated Symmetric Ion Trap for Quantum Information Processing

Bilayer Ion Trap Design for 2D Arrays

A Site-Resolved 2D Quantum Simulator with Hundreds of Trapped Ions

Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation

Surface-Electrode Ion Trap with Ground Structures for Minimizing the Dielectric Loss in the Si Substrate

RF Performance Benchmarking of TSV Integrated Surface Electrode Ion Trap for Quantum Computing

On the transport of atomic ions in linear and multidimensional ion trap arrays

Fabrication of Surface Ion Traps with Integrated Current Carrying Wires enabling High Magnetic Field Gradients

An ion trap of monolithic 3D structure for quantum information

Surface Traps for Freely Rotating Ion Ring Crystals

(k,m)-Catalan Numbers and Hook Length Polynomials for Plane Trees