Abstract:The surface-electrode ion trap is one of the key devices in modern ion-trapping apparatus to host the ion qubits for quantum computing. Surface traps fabricated on the silicon substrate have the versatility for complex electrode fabrication with 3-D integration capability. However, Si-induced dielectric loss has to be considered in trap design, and a ground structure is being incorporated to mitigate this concern. In this article, surface-electrode ion trap is fabricated using the standard Cu back-end process on a 300-mm Si wafer platform. Several process novelties are demonstrated: 1) the use of electroplated Cu/Au layers using microfabrication techniques to form the surface electrodes; 2) the use of dry etching to form the fine-gap oxide trench between the electrodes for reducing the charge-induced stray electric field; 3) the use of Cu mesh ground structure to enhance the resonance performance of the trap; and 4) process optimization to minimize the undercut in Cu/Au electrodes. Promising electrical properties are obtained from the fabricated ion trap with a leakage current failure rate of < 10% on a 300-mm wafer. Two trap types designed with radio-frequency (RF) linewidth of 80 and $40~\mu \text{m}$ are evaluated for their resonance performance with and without the ground plane. By incorporating ground plane into the ion trap, the resonance performances are significantly improved with an output power increment of 11 and 13 dB and $Q$ factor increment of 2 and 6 for the corresponding trap types.

Optimization of Parameters of a Surface-Electrode Ion Trap and Experimental Study of Influences of Surface on Ion Lifetime

A Configurable Surface-Electrode Ion Trap Design for Quantum Information Processing

Versatile Surface Ion Trap for Effective Cooling and Large-Scale Trapping of Ions

Fabrication and Characterization of Surface Electrode Ion Trap for Quantum Computing

Versatile Surface Ion Trap with Fork Junction for Effective Cooling

Design Optimization for Anharmonic Linear Surface-Electrode Ion Trap

Optimized surface ion trap design for tight confinement and separation of ion chains

(k,m)-Catalan Numbers and Hook Length Polynomials for Plane Trees

Surface-Electrode Ion Trap with Ground Structures for Minimizing the Dielectric Loss in the Si Substrate

Characteristics of electrical field and ion motion in surface-electrode ion traps.

Creating Equally Spaced Linear Ion String in a Surface-Electrode Trap by Feedback Control

Characterizing the spatial potential of a surface electrode ion trap

TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

Optimum electrode configurations for fast ion separation in microfabricated surface ion traps

Multi-junction surface ion trap for quantum computing

Surface Electrode Ion Trap Developed and Improvement by Oxide-First-Metal-Last Approach for High Performance Quantum Computing

Controlling the Surface Roughness of Surface-Electrode Ion Trap Based on Micro-Nano Fabrication

Surface trap with dc-tunable ion-electrode distance

Optimization and Simulation of Mems Rectilinear Ion Trap

RF Performance Benchmarking of TSV Integrated Surface Electrode Ion Trap for Quantum Computing

Design Considerations and Fabrication Challenges of Surface Electrode Ion Trap with TSV Integration