Abstract:A much stronger interfacial gating effect was observed in the graphene/HfO2/Si photodetector when compared with that in the graphene/SiO2/Si photodetector. We found that this improvement was due to the higher interface state density at the HfO2/Si interface and the higher dielectric constant of the HfO2 layer. The photoresponsivity of the graphene/HfO2/Si photodetector is as high as 45.8 A W-1. Germanium and amorphous MoS2 (a-MoS2) were used to prepare graphene/HfO2/Ge and graphene/HfO2/a-MoS2 photodetectors, further demonstrating the high efficiency of the interfacial gating mechanism for photodetection. Because of the 0.196 eV bandgap of a-MoS2, which was verified in our previous report, the graphene/HfO2/a-MoS2 photodetector realized ultrabroadband photodetection over the range from 473 nm (visible) to 2712 nm (mid-infrared) at room temperature with photoresponsivity as high as 5.36 A W-1 and response time as fast as 68 μs, which represent significant improvements from the corresponding properties of the pure a-MoS2 photodetectors in our previous report and are comparable with those of state-of-the-art broadband photodetectors. By taking full advantage of the interfacial gating mechanism, a fast response, high photoresponsivity and ultrabroadband photodetection were achieved simultaneously. These interfacial gated graphene photodetectors also offer simple fabrication and full semiconductor process compatibility. The advantages described here indicate that the proposed photodetectors have significant potential for use in electronic and optoelectronic applications and offer a new path toward the development of ultrabroadband photodetectors.

Graphene As Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

Determination of Graphene Work Function and Graphene-Insulator-semiconductor Band Alignment by Internal Photoemission Spectroscopy

Broadband InSb/Si Heterojunction Photodetector with Graphene Transparent Electrode.

Study on the Graphene/Silicon Schottky Diodes by Transferring Graphene Transparent Electrodes on Silicon

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes

Graphene as a transparent electrode for amorphous silicon-based solar cells

Role of Interfacial Oxide in High-Efficiency Graphene-Silicon Schottky Barrier Solar Cells.

Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering

Photovoltaic Properties of Zno/P-Si Heterostructure with Graphene Transparent Electrodes

The Fabrication of Schottky Photodiode by Monolayer Graphene Direct-Transfer-on-silicon

In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors

Direct growth of nanocrystalline graphene/graphite transparent electrodes on Si/SiO2 for metal-free schottky junction photodetectors

Interfacial Gated Graphene Photodetector with Broadband Response

Graphene on Gallium Arsenide: Engineering the visibility

Single-layer Graphene on Al2O3/Si Substrate: Better Contrast and Higher Performance of Graphene Transistors.

Graphene–Silicon Device for Visible and Infrared Photodetection

Resonant nanocavity-enhanced graphene photodetectors on reflecting silicon-on-insulator wafers

Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC

Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement