Abstract:A new approach to epitaxy and in situ band engineering of 2D semiconductors on graphene is presented. Atomically‐thin layers of centro‐symmetric gallium selenide (GaSe) form a high‐quality, scalable interface with graphene, referred to as 2semgraphene. This provides a building block for optical sensors that exploit the photoactive GaSe layer and the charge dipole at its interface with the graphene channel. 2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled, tunable, and scalable. Here, these challenges are addressed by a new approach, which combines molecular beam epitaxy and in situ band engineering in ultra‐high vacuum of semiconducting gallium selenide (GaSe) on graphene. In situ studies by electron diffraction, scanning probe microscopy, and angle‐resolved photoelectron spectroscopy reveal that atomically‐thin layers of GaSe align in the layer plane with the underlying lattice of graphene. The GaSe/graphene heterostructure, referred to as 2semgraphene, features a centrosymmetric (group symmetry D3d) polymorph of GaSe, a charge dipole at the GaSe/graphene interface, and a band structure tunable by the layer thickness. The newly‐developed, scalable 2semgraphene is used in optical sensors that exploit the photoactive GaSe layer and the built‐in potential at its interface with the graphene channel. This proof of concept has the potential for further advances and device architectures that exploit 2semgraphene as a functional building block.

Graphene on Gallium Arsenide: Engineering the visibility

Visibility Study Of Graphene Multilayer Structures

Making graphene visible

Visibility of graphene flakes on a dielectric substrate

Visible Diffraction from Graphene and Its Application in Holograms

Fabrication and Characterization of Graphene Derived from SiC

Enhanced Visibility Of Graphene: Effect Of One-Dimensional Photonic Crystal

Colors Of Graphite On Silicon Dioxide

Graphene As Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Twinkling Graphene On Polycrystalline Cu Substrate: A Scanning Electron Microscopy Study

Graphene on insulating crystalline substrates

Single-layer Graphene on Al2O3/Si Substrate: Better Contrast and Higher Performance of Graphene Transistors.

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing

Artificial Graphene on Si Substrates: Fabrication and Transport Characteristics.

Optimising Graphene Visibility in van der Waals Heterostructures

The Direct Synthesis of Graphene on a Gallium Nitride Substrate

Graphene Film Synthesis on SiGe Semiconductor Substrate for Field-Effect Transistor

A Visualization Method for Probing Grain Boundaries of Single Layer Graphene Via Molecular Beam Epitaxy

Large contrast enhancement of graphene monolayers by angle detection

Free-standing Graphene at Atomic Resolution