31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors
Yan Xue,Longjie Wang,Yu Zhang,Guangmin Liang,Junwei Chu,Baixiang Han,Weiran Cao,Congwei Liao,Shengdong Zhang
DOI: https://doi.org/10.1109/led.2020.3046228
IF: 4.8157
2021-02-01
IEEE Electron Device Letters
Abstract:A 31-inch 4K flexible active-matrix organic light-emitting diode (AMOLED) display integrating with gate driver on the array (GOA) technology has been proposed and fabricated on a polyimide substrate. The GOA circuits, composed of two series-connected thin-film transistors (TFTs) and dual low-voltage power structure, are introduced to decrease the leakage current in TFTs. They are arranged symmetrically along the sides of the display. Inkjet printing (IJP) OLED process is used to reduce the number of sub-pixels from four (R/G/B/W) in commercial white OLED process to three (R/G/B) and a high pixel density in the display (144 pixels per inch) is achieved. Moreover, top-gated (TG) amorphous indium-gallium-zinc oxide (IGZO) TFTs with good electrical and mechanical reliability, have been successfully utilized to decrease the capacitance load in the display and improve signal transfer speed in GOA. Finally, this 31-inch flexible AMOLED display was operated for 500h under accelerating test conditions of 60°C and 90% humidity.
engineering, electrical & electronic