Abstract:The relatively poor atomic-oxygen (AO) resistance of the standard polyimide (PI) films greatly limits the wide applications in low earth orbit (LEO) environments. The introduction of polyhedral oligomeric silsesquioxane (POSS) units into the molecular structures of the PI films has been proven to be an effective procedure for enhancing the AO resistance of the PI films. In the current work, a series of POSS-substituted poly (pyromellitic anhydride-4,4′-oxydianiline) (PMDA-ODA) films (POSS-PI) with different POSS contents were synthesized via a POSS-containing diamine, N-[(heptaisobutyl-POSS)propyl]-3,5-diaminobenzamide (DABA-POSS). Subsequently, the effects of the molecular structures on the thermal, tensile, optical, and especially the AO-erosion behaviors of the POSS-PI films were investigated. The incorporation of the latent POSS substituents decreased the thermal stability and the high-temperature dimensional stability of the pristine PI-0 (PMDA-ODA) film. For instance, the PI-30 film with the DABA-POSS content of 30 wt% in the film exhibited a 5% weight loss temperature (T5%) of 512 °C and a coefficient of linear thermal expansion (CTE) of 54.6 × 10−6/K in the temperature range of 50–250 °C, respectively, which were all inferior to those of the PI-0 film (T5% = 574 °C; CTE = 28.9 × 10−6/K). In addition, the tensile properties of the POSS-containing PI films were also deteriorated, to some extent, due to the incorporation of the DABA-POSS components. The tensile strength (TS) of the POSS-PI films decreased with the order of PI-0 > PI-10 > PI-15 > PI-20 > PI-25 > PI-30, and so did the tensile modulus (TM) and the elongations at break (Eb). PI-30 showed the TS, TM, and Eb values of 75.0 MPa, 1.55 GPa, and 16.1%, respectively, which were all lower than those of the PI-0 film (TS = 131.0 MPa, TM = 1.88 GPa, Eb = 73.2%). Nevertheless, the incorporation of POSS components obviously increased the AO resistance of the PI films. All of the POSS-PI films survived from the AO exposure with the total fluence of 2.16 × 1021 atoms/cm2, while PI-0 was totally eroded under the same circumstance. The PI-30 film showed an AO erosion yield (Es) of 1.1 × 10−25 cm3/atom, which was approximately 3.67% of the PI-0 film (Es = 3.0 × 10−24 cm3/atom). Inert silica or silicate passivation layers were detected on the surface of the POSS-PI films after AO exposure, which efficiently prevented the further erosion of the under-layer materials.

Trisilanolphenyl-POSS Nano-Hybrid Poly(biphenyl Dianhydride-P-phenylenediamine) Polyimide Composite Films: Miscibility and Structure-Property Relationship

Synthesis and Characterization of Incompletely Condensed Heptaphenyltrisilanol-POSS

Preparation and Properties of Intrinsically Atomic-Oxygen Resistant Polyimide Films Containing Polyhedral Oligomeric Silsesquioxane (POSS) in the Side Chains

The Preparation and Properties of Polyimide Films Modified by Octa(aminopropylsilsesquioxane)

Grafted Polybenzimidazole Copolymers Bearing Polyhedral Oligosilsesquioxane Pendant Moieties

Organo-soluble and transparent polyimides containing phenylphosphine oxide and trifluoromethyl moiety: Synthesis and characterization

Polyhedral oligosilsesquioxane-modified boron nitride enhances the mechanical properties of polyimide nanocomposites

Synthesis and Properties of Soluble Transparent Polyimides Containing Tert-Butyl and Isobutyl Groups

Synthesis and Characterization of Thianthrene-Containing Preimidized Soluble Polyimide Resins and the Derived Films with High Refractive Indices and Good Optical Transparency

Organic–inorganic Polyimide Nanocomposites Containing a Tetrafunctional Polyhedral Oligomeric Silsesquioxane Amine: Synthesis, Morphology and Thermomechanical Properties

Structure and Mechanical Properties of the Hybrid Films of Well Dispersed SiO2 Nanoparticle in Polyimide (pi/sio2) Prepared by Sol–gel Process

Fluorinated polyimide/POSS hybrid polymers with high solubility and low dielectric constant

Synthesis and Characterization of Polyimides from 4,4′-(3-(tert-butyl)-4-aminophenoxy)diphenyl Ether

Atomic Oxygen-Resistant Polyimide Composite Films Containing Nanocaged Polyhedral Oligomeric Silsesquioxane Components in Matrix and Fillers

Synthesis and Properties of Optically Transparent Fluoro-Containing Polyimide Films with Reduced Linear Coefficients of Thermal Expansion from Organo-Soluble Resins Derived from Aromatic Diamine with Benzanilide Units

Resistance of POSS Polyimide Blends to Hyperthermal Atomic Oxygen Attack.

Phenylethynyl-terminated Oligoimides Based on Bis(p-Aminophenoxy)dimethyl Silane: Effect of Siloxane Structure on Processability and Thermal Stability

Effect of POSS on Morphology and Properties of Poly(2,6-Dimethyl-1,4-phenylene Oxide)/polyamide 6 Blends

Structure and Properties of Thermoplastic Polyimide Based on 4', 4'-(Oxybis (methylene)) Bis ([1.1'- Bipheny]3-Amine) Diamine

Epoxy Resin Containing Octamaleimidophenyl Polyhedral Oligomeric Silsesquioxane

Soluble And Transparent Polyimides With High T-G S From A New Semi-Aliphatic Diamine With Cyclohexyl And Ortho-Methyl Groups