Direct band-gap iodide double perovskite solar cell materials by doping strategy: First-principles predictions
Tong Sun,Zhigang Ma,Min Yao,Jing Wei,Yunhui Liu,Xing Ming
DOI: https://doi.org/10.1016/j.mtcomm.2023.107055
IF: 3.8
2023-09-17
Materials Today Communications
Abstract:As alternatives to lead-based halide perovskite materials, the lead-free halide double-perovskite materials have many advantages but often show wide indirect band gaps and exceed the optimum band-gap range of 0.9–1.6 eV. Based on first-principles calculations, we scan a serial of halide double-perovskites Cs 2 B′B''X 6 (B′ = Li, Na, K; B'' = In, Bi; X = Cl, Br, I) and find that most of Cs 2 B′B''X 6 double-perovskite materials have direct band gaps but larger than 1.6 eV, while the direct band gaps of Cs 2 LiInI 6 and Cs 2 NaInI 6 are smaller than 0.9 eV. We modulate the electronic structure of Cs 2 B′InI 6 (B′ = Li, Na, K) by an ionic doping strategy through substituting partial In ions with Bi ions and discover more halide double-perovskite solar cell materials with suitable band gap. By exploring the stability, electronic structures and optical properties of the doped double-perovskite Cs 2 B′In 1- x Bi x I 6 (B′ = Li, Na, K, x = 0.25 and 0.75), we discover the Cs 2 B′In 0.75 Bi 0.25 I 6 (B′ = Li, Na and K) DP materials show direct band gaps within the optimal band-gap range of 0.90 − 1.60 eV for promising solar-cell materials. Meanwhile, the doped Cs 2 B′In 1- x Bi x I 6 DP materials show good carrier mobility as high as 10 3 cm 2 S −1 V −1 . Moreover, the predicted new materials exhibit excellent light absorption coefficients of 10 6 cm −1 in the visible light range. These new lead-free inorganic DP materials may offer great promise as candidates for highly efficient solar absorber materials for photovoltaic applications.
materials science, multidisciplinary