Low Resistivity ITO Thin Films Deposited by NCD Technique at Low Temperature: Variation of Tin Concentration
S. V. Pammi,Anupama Chanda,Jun-Ku Ahn,Jong-Hyun Park,Chae-Ryong Cho,Won-Jae Lee,Soon-Gil Yoon
DOI: https://doi.org/10.1149/1.3467802
IF: 3.9
2010-01-01
Journal of The Electrochemical Society
Abstract:High quality indium tin oxide (ITO) thin films were grown by the nanocluster deposition (NCD) technique at a low temperature. The ITO films were examined using a four-point probe and Hall probe measurements, scanning electron microscopy, atomic force microscopy, X-ray fluorescence, X-ray diffraction, and X-ray photoelectron spectroscopy. The lowest resistivity (1.8×10−4Ωcm) and highest optical transparency (92%) were obtained for films containing a tin concentration of 7 wt %. The absence of hydroxyl groups, organic contamination, and carbon content in the films grown at a low temperature of 250°C by NCD indicates the complete decomposition of metallorganic precursors. Excellent optoelectronic and surface chemical properties can be favorable for a transparent electrode in many display technologies.
electrochemistry,materials science, coatings & films