Semi-Transparent ZnO-CuI/CuSCN Photodiode Detector with Narrow-Band UV Photoresponse.

Zhi Yang,Minqiang Wang,Jijun Ding,Zhongwang Sun,Le Li,Jin Huang,Jing Liu,Jinyou Shao
DOI: https://doi.org/10.1021/acsami.5b05222
IF: 9.5
2015-01-01
ACS Applied Materials & Interfaces
Abstract:The ZnO homogeneous pn junction photodiode is quite difficult to fabricate due to the absence of stable p-type ZnO. So exploring reliable p-type materials is necessary to build a heterogeneous pn junction with n-type ZnO. Herein, we develop a simple and low-cost solution-processed method to obtain inorganic p-type CuI/CuSCN composite film with compact morphology, high conductivity, and low surface state. The improved performance of CuI/CuSCN composite film can be confirmed based on high-rectification ratio, responsivity, and open voltage of ZnO-CuI/CuSCN photodiode UV detectors. Moreover, photodiodes with novel top electrodes are investigated. Compared with commonly used Au and graphene/Ag nanowire (NWs) electrode, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) electrode prepared by Meyer rod-coating technique opens one route to obtain a semitransparent photodiode. The photodiode withPEDOT:PSS as the top electrode under reverse illumination has the highest photocurrent density due to higher UV transmittance ofPEDOT:PSS transparent electrode compared with ITO glass. The low-energy consumption, and high responsivity, UV to visible rejection ratio and air stability make this ZnO-CuI/CuSCN photodiode quite promising in the UV-A detection field.
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