Piezo-phototronic effect enhanced performance of a p-ZnO NW based UV–Vis–NIR photodetector
Zhihao Huo,Yufei Zhang,Xun Han,Wenqiang Wu,Wenkai Yang,Xiandi Wang,Mengmeng Zhou,Caofeng Pan
DOI: https://doi.org/10.1016/j.nanoen.2021.106090
IF: 17.6
2021-08-01
Nano Energy
Abstract:<p>ZnO, as a potential candidate, has attracted extensive attention in optoelectronics, energy systems and other fields. However, the wide bandgap of ZnO severely limits its application in a wide range of photoresponse, and preparing p-type ZnO is another stumbling block that hinders the development of ZnO-based devices. Here, a high-performance photodetector with a wider spectral detection range from UV–vis to NIR builds on the structure of p-ZnO/Al<sub>2</sub>O<sub>3</sub>/n-Si is fabricated. The PD exhibits a marked sensitivity (75,000%), excellent responsivity (13.80 A W<sup>−1</sup>, 365 nm), high specific detectivity (> 10<sup>12</sup> Jones), fast response (< 100 μs), which indicates that inserting an insulated Al<sub>2</sub>O<sub>3</sub> layer between an n-type semiconductor and a p-type semiconductor is a fruitful method to enhance carriers separation and collection efficiency. The carrier transport mechanism at the interface of PDs with different Al<sub>2</sub>O<sub>3</sub> thickness is based on the quantum mechanical of Fowler-Nordheim tunneling or direct tunneling. Additionally, the overall signal levels of the photodetector could be further optimized using the piezo-phototronic effect. This study demonstrates an alternative route to implement high-efficiency photodetectors with a broader response range and provides an in-depth understanding of regulating carrier tunneling of the p-ZnO/Al<sub>2</sub>O<sub>3</sub>/n-Si heterojunction using the piezo-phototronic effect.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology