Abstract:As a typical representative of group III-VI two-dimensional (2D) layered semiconductors, α-In2Se3 with layer-dependent direct bandgap (1.39–1.45 eV) has attracted great attention in optoelectronics. At present, various α-In2Se3 based photodetectors have been developed, which show ultrahigh responsivity and detectivity at visible (VIS) wavelengths. However, despite the high sensitivity, the response time is quite long, and the realization of broadband detection from VIS to infra-red (IR) wavelengths is also challenging for these α-In2Se3 photodetectors. In this paper, we introduced a narrow and direct bandgap 2D semiconductor Ta2NiSe5 and made an α-In2Se3/Ta2NiSe5 heterojunction photodetector, which achieved a wide response wavelength of 405–1550 nm with high performance. Originating from the n-type nature of the two semiconductors and the particular type-I energy band alignment, the potential barriers of holes at the α-In2Se3/Ta2NiSe5 interface is much higher than that of electrons, which leads to an ultra-high responsivity. At 520 nm illumination, the photoresponsivity is 12 A/W and 533 A/W under a self-driven state and a slight bias voltage of 0.1 V, respectively. The highest detectivity is over 8.2 × 1013 Jones. Furthermore, the rise and fall time is shortly at 25 and 423 μs, respectively. We believe that the high-sensitive, broadband, and fast photodetector has great potential in the emerging field of 2D optoelectronics.

Synthesis of Two-Dimensional Alloy Ga 0.84 In 0.16 Se Nanosheets for High-Performance Photodetector.

Solid-State Reaction Synthesis of Two-Dimensional Cugase2 Nanosheets for High Performance Photodetectors

Synthesis of few-layer GaSe nanosheets for high performance photodetectors.

Synthesis of Multilayer InSe0.82Te0.18 Alloy for High Performance Near-Infrared Photodetector

Self-Powered SnS1- xSe x Alloy/Silicon Heterojunction Photodetectors with High Sensitivity in a Wide Spectral Range

Synthesis of Superlattice InSe Nanosheets with Enhanced Electronic and Optoelectronic Performance.

Two-Dimensional Nonlayered CuInSe2 Nanosheets for High-Performance Photodetectors

Liquid-Alloy-Assisted Growth of 2D Ternary Ga2In4S9 Toward High-Performance UV Photodetection

High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In 2 Se 3 nanosheet photodetectors

Large‐Size Ultrathin Α‐ga2s3 Nanosheets Toward High‐Performance Photodetection

Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

Large‐Size Ultrathin α‐Ga 2 S 3 Nanosheets toward High‐Performance Photodetection

Highly Sensitive Photodetector Based on the N-Si/p-gase Vertical Heterojunction

High-performance self-powered photodetector based on Bi2O2Se nanosheets

PbSe Quantum Dots Sensitized High-Mobility Bi2O2Se Nanosheets for High-Performance and Broadband Photodetection Beyond 2 Micrometers.

Direct growth Bi2O2Se nanosheets on SiO2/Si substrate for high-performance and broadband photodetector

Large-Area Synthesis of Layered HfS2(1- x )Se2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps

A Mixed-Dimensional 1D Se-2D InSe Van Der Waals Heterojunction for High Responsivity Self-Powered Photodetectors.

Synthesis of Two-Dimensional Β-Ga2o3nanosheets for High-Performance Solar Blind Photodetectors

Two-dimensional (2D) α-In2Se3/Ta2NiSe5 heterojunction photodetector with high sensitivity and fast response in a wide spectral range

Ternary SnS 2– x Se x Alloys Nanosheets and Nanosheet Assemblies with Tunable Chemical Compositions and Band Gaps for Photodetector Applications