Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Tunable single-mode lasing in a single semiconductor microrod.

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Wavelength tunable CdSe nanowire lasers based on the absorption-emission-absorption process.

Coherent mode-combined ultra-narrow-linewidth single-mode micro-disk laser

Flexibly and Repeatedly Modulating Lasing Wavelengths in a Single Core-Shell Semiconductor Microrod.

Dynamical Color-Controllable Lasing with Extremely Wide Tuning Range from Red to Green in A Single Alloy Nanowire Using Nanoscale Manipulation

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Single-nanowire single-mode laser.

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Tunable Quantum Dot Lasers Grown Directly on Silicon

1.3 Qm Tunable Quantum Dot Lasers

Self-selection Mechanism of Fabry-Pérot Micro/nanoscale Wire Cavity for Single-Mode Lasing

Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling.

The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities

Fast Lasing Wavelength Tuning in Single Nanowires

Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

Tuneable Red, Green, and Blue Single-Mode Lasing in Heterogeneously Coupled Organic Spherical Microcavities.

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption.