Facilitating the Carrier Transport Kinetics at the CsPbBr 3 /Carbon Interface through SbX 3 (X = Cl, Br, I) Passivation
Wenwen Liu,Teng Zhang,Baohua Zhao,Chengben Liu,Youru Bai,Zhi Li,Shihui Zhu,Tailin Wang,Xinyu Sun,Heyuan Liu,Zhaobin Liu,Yanli Chen,Xiyou Li
DOI: https://doi.org/10.1021/acsami.2c17046
IF: 9.5
2022-12-14
ACS Applied Materials & Interfaces
Abstract:The nonradiative carrier recombination at the perovskite/carrier selective layer (CSL) interface was accounted for the inferior power conversion efficiency (PCE) of perovskite solar cells (PSCs), especially rigid all-inorganic perovskite (CsPbI<sub>3</sub> and CsPbBr<sub>3</sub>). In this study, targeting the poor interface, we introduce SbX<sub>3</sub> (X = Cl, Br, I) surface passivation at the CsPbBr<sub>3</sub>/carbon interface. Smoothed compressive strain, reduced defect density, and enhanced energy-level alignment were achieved simultaneously, facilitating carrier extraction at the selective interface. With the simple aqueous solution-based two-step process, the PCE of our SbI<sub>3</sub> passivated carbon-based CsPbBr<sub>3</sub> PSCs has increased from 7.81% (without passivation) to 9.69%, a ∼25% enhancement. Specifically, <i>V</i><sub>oc</sub> (1.657 V) of the SbI<sub>3</sub>-passivated cells was much higher than that of the control ones (1.488 V), confirming the ameliorated interface. Finally, our unencapsulated SbI<sub>3</sub> passivated devices maintain 90% of their initial PCEs while left in the air for 30 days with a relative humidity of 60%. To conclude, we present an interfacial carrier extraction-enhanced strategy for preparing high-performance and stable CsPbBr<sub>3</sub>-based PSCs.
materials science, multidisciplinary,nanoscience & nanotechnology