Electrostatic Potential and Valence Modulation in La0.7Sr0.3MnO3 Thin Films

Robbyn Trappen,A. C. Garcia-Castro,Vu Thanh Tra,Chih-Yeh Huang,Wilfredo Ibarra-Hernandez,James Fitch,Sobhit Singh,Jinling Zhou,Guerau Cabrera,Ying-Hao Chu,James M. LeBeau,Aldo H. Romero,Mikel B. Holcomb
DOI: https://doi.org/10.1038/s41598-018-32701-x
IF: 4.6
2018-01-01
Scientific Reports
Abstract:The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.
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