Abstract:Theoretical prediction of interfacial capacitance in graphene-based supercapacitors is crucial to accelerating materials' design and development cycles. However, there is currently a significant gap between ab initio predictions and experimental reports, particularly in the case of nitrogen-doped graphene. Analyses based on changes to the density of states of freestanding graphene upon doping do not account for the electronic interactions between the electrode, dopants, and substrates. The result is an overestimation of the doping-induced capacitance increase by up to two orders of magnitude. Moreover, it is unclear whether electrolyte and solvent interactions can further complicate matters by inducing changes to the band structure and, therefore, the capacitive properties of the electrode. A third complication lies in the fixed-band approximation, where materials are simulated without accounting for the influence of an external electrical field. In this work, we present an interfacial modeling and characterization procedure that leverages the combined strengths of ab-initio molecular dynamics, density functional theory, and microscopic polarization theory to produce reliable predictions of interfacial capacitance. The procedure is applied to two case studies of interest in supercapacitor design: (1) nitrogen-doped graphene on a Cu(111) substrate and (2) an interface between bulk water and Cu(111)-supported graphene at room temperature. Results show that water alters graphene's band structure from a semi-metallic to an n-doped-semiconducting character and that metallic substrates dominate the band structure of the electrode interface even in the presence of dopants. The water interface also shows an asymmetric capacitive response relative to the polarity of the applied field.

Doping-Induced Tunable Wettability and Adhesion of Graphene

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Unlocking the chemistry of graphene: the impact of charge carrier concentration on molecular adsorption on graphene

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

Electrostatic Doping Of Graphene From A Linbo3 (0001) Substrate

Doping graphene by adsorption of polar molecules at the oxidized zigzag edges

Overcoming Doping Difficulty in Graphene Via Substrate

Water-Gated Charge Doping of Graphene Induced by Mica Substrates

Doping Monolayer Graphene with Single Atom Substitutions

Tuning the Doping Types in Graphene Sheets by N Monoelement

Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid

Tuning the Doping Type and Level of Graphene with Different Gold Configurations

Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions

Wetting Transparency of Supported Graphene is Regulated by Polarities of Liquids and Substrates

Tunable interfacial chemisorption with atomic-level precision in a graphene WSe2 heterostructure

Influence of doping and solvent interactions on the electronic and capacitive properties of metal-supported graphene: A combined DFT and AIMD study

Chemically-doped Graphene with Improved Surface Plasmon Characteristics: an Optical Near-Field Study

Electron-doping of Graphene-Based Devices by Hydrazine

Acoustic charge transport induced by the surface acoustic wave in chemical doped graphene

Controlled Ambipolar-to-unipolar Conversion in Graphene Field-Effect Transistors Through Surface Coating with Poly(ethylene Imine)/poly(ethylene Glycol) Films.