Abstract:Here, the electronic and bonding features in ground-state structures of germanium nitrides under different components that not accessible at ambient conditions have been systematically studied. The forming essence of weak covalent bonds between the Ge and N atom in high-pressure ionic crystal Fd-3 m-Ge3N4 is induced by the binding effect of electronic clouds originated from the Ge_ p orbitals. Hence, it helps us to understand the essence of covalent bond under high pressure, profoundly. As an excellent reducing agent, germanium transfer electrons to the antibonding state of the N2 dimer in Pa-3-GeN2 phase at 20 GPa, abnormally, weakening the bonding strength considerably than nitrogen gap (N≡N) at ambient pressure. Furthermore, the common cognition that the atomic distance will be shortened under the high pressures has been broken. Amazingly, with a lower range of synthetic pressure (∼15 GPa) and nitrogen contents (28%), its energy density is up to 2.32 kJ·g-1, with a similar order of magnitude than polymeric LiN5 (nonmolecular compound, 2.72 kJ·g-1). It breaks the universal recognition once again that nitrides just containing polymeric nitrogen were regarded as high energy density materials. Hence, antibonding induced energy density enhancement mechanism for low nitrogen content and pressure has been exposed in view of electrons. Both the highest occupied molecular orbitals (HOMO) and the lowest unoccupied molecular orbitals (LUMO) are usually the separated orbitals of N_π* and N_σ*, which are the key to stabilization. Besides, the sp2 hybridizations that exist in N4 units are responsible for the stability of the R-3 c-GeN4 structure and restrict the delocalization of electrons, exhibiting nonmetallic properties.

Insights into Antibonding Induced Energy Density Enhancement and Exotic Electronic Properties for Germanium Nitrides at Modest Pressures

Nitrogen-rich GaN5 and GaN6 As High Energy Density Materials with Modest Synthesis Condition

Theoretical Studies on Tetragonal,Monoclinic and Orthorhombic Distortions of Germanium Nitride Polymorphs

First-Principles Study on the Electronic, Elastic and Thermodynamic Properties of Three Novel Germanium Nitrides

Pressure-Driven Ne-Bearing Polynitrides with Ultrahigh Energy Density

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Structural Design and Physical Properties of Gallium Nitrides under High Pressures

Pressure-induced superconductivity in a novel germanium allotrope

Unusual structure and properties of germanium under pressure

Building Nitridic Networks with Phosphorus and Germanium-from Ge II P 2 N 4 to Ge IV PN 3

Superconductivity and unexpected chemistry of germanium hydrides under pressure

Determination of the Finite-Temperature Anisotropic Elastic and Thermal Properties of Ge3N4: A First-Principles Study

Ab Initio Study on Intrinsic Defect Properties of Germanium Nitride Considered for Gate Dielectric

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Structural, Vibrational, and Electrical Transport Properties of Nodal-Line Semimetal Candidate CaCdGe under High Pressure

First-Principles Design on Atomic Scale for the Three Novel Germanium Nitrides

Stabilized Nitrogen Framework Anions in the Ga-N System.

Structural and electrical properties of GeSe and GeTe at high pressure

Exotic stable cesium polynitrides at high pressure

High-pressure phases of a hydrogen-rich compound: tetramethylgermane