Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Achieving Low Contact Resistance by Engineering a Metal-Graphene Interface Simply with Optical Lithography.

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

Realization of low contact resistance close to theoretical limit in graphene transistors

Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

Reducing Contact Resistance in Graphene Devices through Contact Area Patterning

Optimizing the fabrication process for high performance graphene field effect transistors.

Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering

Ultraviolet/Ozone Treatment to Reduce Metal-Graphene Contact Resistance

Reducing the metal-graphene contact resistance through laser-induced defects

Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted clean fabrication process

UV/Ozone treatment to reduce metal-graphene contact resistance

Improved Conductivity of Low‐Temperature‐Synthesized Graphene/Cu for CMOS Backend‐of‐Line Interconnect Applications

Ultra-low contact resistance in graphene devices at the Dirac point

The role of contact resistance in graphene field-effect devices

A simple and robust approach to reducing contact resistance in organic transistors

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Improved Contact Resistivity and Enhanced Mobility of Metal-Graphene FET by Inserting Ultra-Thin MoOx Layer at Source/drain Region

Electrical properties of graphene-metal contacts

Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors

Direct Writing of Electronic Devices on Graphene Oxide by Catalytic Scanning Probe Lithography