Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, α-In2Se3, known for its electrically addressable vertical polarization, has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in single-domain α-In2Se3. The processes of vertical polarization switching in monolayer α-In2Se3 are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of α-In2Se3, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Room Temperature In-Plane Ferroelectricity in Van Der Waals In2Se3.

Electric-Field-Induced Room-Temperature Antiferroelectric–Ferroelectric Phase Transition in van der Waals Layered GeSe

Room-temperature Out-of-plane and In-Plane Ferroelectricity of Two-Dimensional Β-Inse Nanoflakes

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Prediction of intrinsic two-dimensional ferroelectrics in In 2 Se 3 and other III 2 -VI 3 van der Waals materials

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Electronic bandstructure of in-plane ferroelectric van der Waals $β'-In_{2}Se_{3}$

Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Atomically Thin Α-In2se3: an Emergent Two-Dimensional Room Temperature Ferroelectric Semiconductor

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Out-of-Plane Ferroelectricity in Two-Dimensional 1T′′′-MoS 2 Above Room Temperature

Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium