Fabrication and Electrical Properties of Semi-Conductive H-Bncx Thin Films
Ning Guo,Jinquan Wei,Yi Jia,Huanhuan Sun,Dan Yang,Shengyi Yang,Yuhang Wang,Liuwan Zhang,Anyuan Cao,Hongwei Zhu,Kunlin Wang,Dehai Wu
DOI: https://doi.org/10.1166/sam.2014.1732
2014-01-01
Science of Advanced Materials
Abstract:Two-dimensional thin films with graphene domains embedding in hexagonal boron nitride (h-BNCx) has attractive application due to its tunable energy band gap. In this work, we report a one-step low pressure chemical vapor deposition method to fabricate large-area h-BNCx films without introducing carbon source. The carbon in h-BNCx derives from oil vapor of rotary pump, and it is well controlled by growing parameters, such as growing temperature, annealing time and growth time. It offers a method to fabricate h-BNCx film with low carbon concentration (<20 at.% C). Electron energy loss spectrum shows that boron, nitride and carbon atoms are sp(2) hybridized and assemble into atomic layers. X-ray photoelectron spectra characterization further reveals that the h-BNCx has a hybridized structure with graphene domains embedding in h-BN layers. The intensity ratio of G-band and D-band in Raman spectra could be used to characterize the carbon content in h-BNCx film qualitatively. The band gap and electrical properties of the h-BNCx is tailored by the carbon concentration. The carrier mobility, resistivity perpendicular and parallel to the h-BNCx film are 5.1x10(-2) cm(2).V-1.s(-1), 55 k Omega.cm and 12.6 M Omega.cm for the samples with carbon concentration of 20.2 at.%, respectively.