Abstract:With the emerging of topological insulator (TI) and spin-transfer torque magnetic RAM (STT-MRAM), the electronic devices exploring the carrier transport with spin degree-of-freedom (i.e., spintronics) have come to spotlight. The advantages of these types of materials and devices include robustness to carrier scattering, hence the high mobility, and magnetism-switching without relying on the magnetic field, thus resulting in simple device structure and low-power operation. This talk focuses on the macroscopic modeling for carrier transport with electron-spin playing a critical role, and its application in analyzing the surface plasma-wave instability in the channel of TI-FET (field-effect transistor) for the purpose of THz signal generation. First, the formalism for the Boltzmann transport equation (BTE) with distribution function including the spin polarization density are reviewed. This BTE with spin-direction as another dimension in position-momentum phase space is named S-BTE. Then, the S-BTE is reformulated by using the moment-method to obtain a hydrodynamic (HD) equation, which, when applied to the electron transport in the channel of TI-FETs, forms the basis for the equation set of solving for plasma wave of channel electrons. Under certain biasing conditions for this set of equations, an effect named as DS [1] can be explored for the THz signal generation and the potential of using TI material for the channel is evaluated.In the theoretical part of S-BTE development, we discussed how to introduce the momentum-spin locking mechanism, which is a prominent feature in TI-based devices and how to introduce the scattering terms in S-BTE.

Transport Theory for Electrical Detection of the Spin-Momentum Locking of Topological Surface States.

Bilinear Magnetoelectric Resistance As a Probe of Three-Dimensional Spin Texture in Topological Surface States

Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

Electrical spin polarization through spin–momentum locking in topological-insulator nanostructures

Electrical Detection of the Helical Spin Texture in a P-Type Topological Insulator Sb2Te3

Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators

Inelastic Transport Detection of Spin Quantum Tunneling and Spin Relaxation in Single-Molecule Magnets in the Absence of A Magnetic Field

Electrical Detection of Spin-Polarized Surface States Conduction in (bi(0.53)sb(0.47))2te3 Topological Insulator.

Electrical detection of current generated spin in topological insulator surface states: Role of interface resistance

Scanning Tunneling Microscopy Studies of Topological Insulators.

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

Spin Injection and Inverse Edelstein Effect in the Surface States of Topological Kondo Insulator SmB6

Gate-controlled spin extraction from topological insulator surfaces

Experimental Observation of Dual Magnetic States in Topological Insulators

Identifying Magnetic Anisotropy of the Topological Surface State Ofcr0.05sb1.95te3with Spin-Polarized STM

Modeling Of Carrier Transport With Spin Degree-Of-Freedom And Its Application To Analysis Of Topological Insulator (Ti) Fet Operation

Topological insulator spin transistor

Nonlinear Spin and Charge Transport in Topological Insulators

A New Self-Filling Mechanism of Band Gap in Magnetically Doped Topological Surface States: Spin-Flipping Inelastic Scattering

Controllable Electron Transport on the Surface of a Topological Insulator

Observation of novel interference patterns in Bi2-xFexTe3+d by Fourier transform scanning tunneling spectroscopy