Abstract:An efficient monolithically integrated light source with complementary metal-oxide-semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE) light sources, such as resonant cavity light-emitting diodes (RCLEDs) and vertical-cavity surface-emitting lasers (VCSELs), are strong contenders due to their compact size, circular emission profile with low beam divergence, wafer-scale fabrication compatibility, high bandwidth, and high coupling efficiency to fiber optic cables. We report the first demonstration of 8-in. wafer-scale GeSn/Ge multiple-quantum-well VCSE p-i-n structures and diodes for laser or light-emitting diode (LED) applications in Si photonics by wafer bonding and layer transfer techniques, which are challenging for all-epitaxy routes. The wafer could be 12 in. (300 mm) since the MQW gain medium is grown on a 300 mm Si wafer, and the bonding is wafer-scale. Alternative dielectric layers (SiO2/SiN/SiO2), introduced by wafer bonding, under the emitting structure, serve as the bottom mirror for the vertical cavity. The Ge0.92Sn0.08/Ge MQW layer is utilized to improve the material quality and to confine injected carriers. As a result, more than 8× enhancement of light emission due to the vertical cavity resonance was demonstrated by photoluminescence spectroscopy. Besides, the spectral purity is enhanced by the single-longitudinal-mode cavity. The intensity of light emission is insensitive to the temperature range from 4 to 300 K and even becomes stronger at higher temperatures since the stronger resonant cavity effect at higher temperatures compensates for the drop in light emission efficiency caused by nonradiative centers. The vertical cavity effect on the light emission is further verified by reflectivity spectroscopy and optical simulations. A positive gain can be achieved as indicated by optical gain calculations. Room-temperature electroluminescence and an excellent carrier injection efficiency of the MQW VCSE diode are observed, showing its potential for electrically injected RCLEDs and VCSELs.

Room-temperature quantum cascade superluminescent light emitters with wide bandwidth and high temperature stability.

High Power Compact Quantum Cascade Superluminescent Emitters with High Temperature Stability and Optical Beam Quality

Mid-infrared Broadband Superluminescent Light Emitter Arrays.

Quantum Cascade Superluminescent Light Emitters with High Power and Compact Structure

Enhanced Properties of the Mid-infrared Superluminescent Emitter with a Composite Waveguide

Top-Emitting Microcavity Light-Emitting Diodes Based on All-Thermally Evaporated Lead-Free Copper Halide Self-Trapped-Exciton Emitters

Broadband Quantum Dot Superluminescent Diode with Simultaneous Three-State Emission

Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Near-infrared and Mid-Infrared Semiconductor Broadband Light Emitters.

Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

Widely Tunable Monolithic Mid-Infrared Quantum Cascade Lasers Using Super-Structure Grating Reflectors

Short-Wave Infrared Light-Emitting Diodes Using Colloidal CuInS2 Quantum Dots with ZnI2 Dual-Passivation

Optically Pumped Mid-Infrared Light Emitter on Silicon

On-Chip Broadband Mid-Infrared Supercontinuum Generation Based on Highly Nonlinear Chalcogenide Glass Waveguides

Research on PbTe/Pb_(1-x)Sr_xTe Multi-Quantum Well Mid-Infrared Light Emitting Device

Extreme temperature operation for broad bandwidth quantum-dot based superluminescent diodes

Integrated widely tunable quantum cascade lasers with super-structure gratings

Quantum Cascade Surface Emitting Lasers

Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

High-Performance Deep Red Colloidal Quantum Well Light-Emitting Diodes Enabled by the Understanding of Charge Dynamics