Abstract:The generation of Schottky barrier height (SBH) at the metal–semiconductor junctions (MSJ)is a hot topic in the area of new two-dimensional (2D) semiconductors. As the charge distribution theory is an effective approach to study the generation of SBHs at the interface, and it has not been studied in depth so far. In this paper, two groups of metal–semiconductor (Pt-MoS2 and Ni-MoS2) and semimetal-semiconductor (Bi-MoS2 and Bi-WSe2) structures are designed, and their charge redistribution mechanisms are studied by the first-principles density functional theory (DFT). The result shows that the band gaps at the interfaces of Pt-MoS2 and Ni-MoS2 are 0.73 eV and 0.68 eV, respectively, and a large SBH is appeared, while the band gaps at the interface of Bi-MoS2 and Bi-WSe2 are basically not exist. The large SBHs are produced at metal–semiconductor (M−S) interfaces due to the push-back effect and metal-induced gap states (MIGS). The weak orbitals and special density of states (DOS) (near-zero DOS at the Fermi level) of Bi atoms at the semimetal-semiconductor (S-S) interface can avoid orbital hybridization and fill the band gap, thus an Ohmic Contact is formed. Additionally, stress modulation is also performed for both sets of interfaces, and the comparison shows that M−S interface is more sensitive to stress modulation than the S-S interface, and the stress has the most pronounced effect on the interface dipole (ΔV), especially at the M−S interfaces. These calculations provide a theoretical complement to the mechanism of ultra-low contact resistance formation at MSJ, bringing new theory and insight into the development of two-dimensional semiconductor devices.

Schottky Barrier Engineering Via Adsorbing Gases At The Sulfur Vacancies In The Metal-Mos2 Interface

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Role of Vacancies in Tuning the Electronic Properties of Au-MoS2 Contact

Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface

Unraveling States, Energetics, and Kinetics of Adsorbing Oxygen Species above MoS2

Surface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

Molybdenum Disulfide As a Highly Efficient Adsorbent for Non-Polar Gases

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

Effect of S Vacancy or Non-Metallic Atom (C, N and F) Doping on the Adsorption Behaviors of Molecules (H2S, BF4) on Monolayer MoS2

Gas dependent hysteresis in MoS$_2$ field effect transistors

Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Electron transport through the multiple sulfur vacancies in MoS2

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Engineering sulfur vacancies in basal plane of MoS2 for enhanced hydrogen evolution reaction

Achieving Adsorbate-Free Monolayered MoS 2 Field Effect Transistors by Controlled Surface Gas Treatment

Controllable Schottky Barriers Between MoS2 and Permalloy