Phase Transformation and Tunable Optoelectrical Properties of Two-Dimensional Layered GaTe 1– x Se x Crystals
Jing Li,Yinlu Gao,Xinglai Zhang,Lixin Chen,Yonghui Ma,Liu Yang,Qing Liu,Xue Jiang,Baodan Liu
DOI: https://doi.org/10.1021/acsaelm.2c00955
IF: 4.494
2022-10-25
ACS Applied Electronic Materials
Abstract:The phase transformation threshold and mechanism of layered GaTe1–x Se x crystals have been controversial for a long time. Herein, we demonstrate that an extremely low Se content of 20% can induce the phase transformation of GaTe1–x Se x from monoclinic structure to hexagonal structure. Theoretical and experimental studies reveal that the introducing of Se dopants effectively stabilizes the host lattice of metastable h-GaTe and thus induces the transformation of GaTe1–x Se x from monoclinic to hexagonal lattice in the low Se doping range. The obtained GaTe1–x Se x crystals also display tunable band gaps from 1.65 to 1. 85 eV and near band edge emission from 755 to 675 nm with increasing Se content from x = 0 to x = 0.44. More importantly, in comparison with GaTe and GaSe, layered GaTe1–x Se x nanosheets exhibit p-type conductivity, higher carrier concentration, excellent photoresponse, and air stability. The fabricated GaTe1–x Se x nanosheet photodetectors also show outstanding performance in the UV and visible range including a high responsivity of 91.3 A/W, an excellent EQE of 3.16 × 104%, and a specific detectivity of 5.05 × 109 Jones.
materials science, multidisciplinary,engineering, electrical & electronic