Effects of High Pressure on the Electrical Resistivity and Dielectric Properties of Nanocrystalline SnO 2

Wenshu Shen,Tianji Ou,Jia Wang,Tianru Qin,Guozhao Zhang,Xin Zhang,Yonghao Han,Yanzhang Ma,Chunxiao Gao
DOI: https://doi.org/10.1038/s41598-018-22965-8
IF: 4.6
2018-01-01
Scientific Reports
Abstract:The electrical transport and structural properties of tin oxide nanoparticles under compression have been studied by in situ impedance measurements and synchrotron X-ray diffraction (XRD) up to 27.9 GPa. It was found that the conduction of SnO 2 can be improved significantly with compression. Abnormal variations in resistivity, relaxation frequency, and relative permittivity were observed at approximately 12.3 and 25.0 GPa, which can be attributed to pressure-induced tetragonal- orthorhombic-cubic structural transitions. The dielectric properties of the SnO 2 nanoparticles were found to be a function of pressure, and the dielectric response was dependent on frequency and pressure. The dielectric constant and loss tangent decreased with increasing frequency. Relaxation-type dielectric behaviour dominated at low frequencies. Whereas, modulus spectra indicated that charge carrier short-range motion dominated at high frequencies.
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