Molecular dynamic simulation of H interaction with C/Be surface

cao xiaogang,tian shuping,ou wei,wang jianqiang,zhang jingquan,pan yudong,gou fujun,chen shunli

DOI: https://doi.org/10.16568/j.0254-6086.2014.02.003

2014-01-01

Abstract:Molecular dynamics method was used to study H interaction with C/Be samples in this paper. It is found that with H atoms bombarding C/Be sample, some H atoms penetrate into the bulk and deposit in the samples. The rate of H retention increases linearly with increasing incident energy. H atoms deposited in the sample react with C atoms forming H-C bonds. The main sputtering product is H atoms and H2 molecules. With the initial incident energy increase, the trend about yield rate of H and H2 is opposite. The relationship between yield rate of H and H2 in different mechanisms and the initial incident energy is analyzed. The modified samples were studied by analyzing incident energy and atom density. The distribution of chemical bonds in the sample was examined. It is found that the change of the distribution of the atoms in the sample is small, the peak of the distribution of chemical bonds only moves to the surface of the sample.